Synthesis and Structural Characterization of a Quaternary Zintl Phase Material from the Rb:Ge:In:As System: Rb(Ge1.5ln0.5)As2(As1.5Ge0.5)

  • Julie L. Shreeve-Keyer
  • Robert C. Haushalter
Part of the Springer Proceedings in Physics book series (SPPHY, volume 81)


In our investigations of new materials with potentially interesting electronic properties, we have synthesized the quaternary Zintl phase material Rb(Ge1.5In0.5)As2(As1.5Ge0.5), (1), from Rb3As7, Ge and In at 700°C. The single crystal structure of 1 has been determined, and has been found to be a layered compound comprised of sheets of indium, germanium, and arsenic with the layers separated by interlamellar rubidium cations. The compounds RbXGe2−XInXAs4, (2), and KXGe2-XT1XAs4, (3) have also been synthesized and were also found to have layered structures. The structure of 1 was determined by single crystal X-ray diffraction: orthorhombic, Cmc21 (#36) with a = 3.799 (3) Å, b = 16.50 (2) Å, c = 12.24 (1) Å, V = 767 (1) Å3, and pealed =4.589 g/cm3 for Z = 4. Least squares refinement of the model based on 322 observed reflections (I > 3.0σ(3(I)) and 45 variable parameters converged to R(R W ) = 2.2% (2.6%). The tendency of the layered Zintl phases to undergo partial elemental substitution to achieve a closed shell electronic configuration is discussed.


Heterogeneous Mixture Single Crystal Structure Arsenic Atom Silver Plate Partial Occupancy 


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Copyright information

© Springer-Verlag Tokyo 1996

Authors and Affiliations

  • Julie L. Shreeve-Keyer
    • 1
  • Robert C. Haushalter
    • 1
  1. 1.NEC Research InstitutePrincetonUSA

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