Wide-gap semiconducting materials superior to silicon

  • K. Kajimura
  • S. Hara
  • K. Hayashi
  • H. Okushi
Part of the Springer Proceedings in Physics book series (SPPHY, volume 81)


Fundamental material research on super-silicon materials with wide band gaps is described in this report. Silicon carbide and diamond are important wide band-gap materials because of their high performances of endurance under high temperature and low conductivities with high avalanche breakdown voltages. In such new materials, crystal hardness results in low crystallinity and difficult incorporation of impurity doping. To overcome the main issue, utilization of advanced silicon material technology is essential. We have grown homo-epitaxial diamond with atomically flat surfaces by clean epitaxy with controlled plasma. Also, using ideal techniques to terminate a surface by hydrogen, established on Si(111) surface, we have reduced interfacial electronic states density at metals/6H-SiC(0001) interfaces enough to generate a flat band, causing a pinning-free interface, by which we are able to control Schottky barrier heights and to achieve ideal Ohmic contacts with zero barrier heights.


Barrier Height Schottky Barrier Diamond Film Schottky Barrier Height Reflection hIgh Energy Electron Diffraction 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. [1]
    E.O.Johnson, RCA Rev., 163 (1965).Google Scholar
  2. [2]
    K.Shenai, R.S.Scott, and B.J.Baliga, IEEE Trans.Electron Devices, 36, 1811 (1989).ADSCrossRefGoogle Scholar
  3. [3]
    H. S.Kong, J.T.Glass, and R.F.Davis, J.Appl.Phys. 64, 2672 (1988).ADSCrossRefGoogle Scholar
  4. [4]
    T.Kimito, H.Nishino, W.S.Yoo, and H.Matsunami, J.Appl.Phys. 73, 726 (1993).ADSCrossRefGoogle Scholar
  5. [5]
    J.A.Powell, J.B.Petit, J.H.Edgar, I.G.Jenkins, L.G.Matus, J.W.Yang, P.Pirouz, W.J.Choyke, L.Clemen, and M.Yoganathan, Appl.Phys.Lett., 59. 333 (1991).ADSCrossRefGoogle Scholar
  6. [6]
    R.Kaplan, Surf Sci. 215, 111 (1989).ADSCrossRefGoogle Scholar
  7. [7]
    M.A.Kulakov, G.Henn, and B.Bullemer, Surf Sci., 346, 49 (1996).ADSCrossRefGoogle Scholar
  8. [8]
    F.Owman, Surf Sci. 330, L639 (1995).ADSCrossRefGoogle Scholar
  9. [9]
    See, for example, S. Grot, in Diamond: Electronic Properties and Applications,edited by L. S. Pan and D. R. Kania (Kluwer Academic, Boston, 1995) chap. 9.Google Scholar
  10. [10]
    J. T. Glass, D. L. Dreifus, R. E. Fauber, B. A. Fox, M. L. Hartsell, R. B. Henard, J. S. Holmes, D. Malta, L. S. Plano, A. J. Tessmer, G. J. Tessmer, and H. A. Wynand, Proc. 4th Int. Con! New Diamond Sci. Technol edited by S. Sato, N. Fujimori, O. Fukunaga, M. Kamo, K. Kobashi, and M. Yoshikawa (MYU, Tokyo, 1994 ), p. 355.Google Scholar
  11. [11]
    Recent reports have described heteroepitaxial nucleation of diamond on SiC, Si, and Pt. See, for example, B. R. Stoner and J. T. Glass: Appl. Phys. Lett. 60, 698 (1994).ADSCrossRefGoogle Scholar
  12. H. Kawarada, T. Suesada, and. H. Nagasawa: Appl. Phys. Lett. 66, 583 (1995).ADSCrossRefGoogle Scholar
  13. X. Jiang, C.-P. Klages, R. Zachai, M. Hartweg, and H.-J. Russer: Appl. Phys. Lett. 62, 3438 (1993).ADSCrossRefGoogle Scholar
  14. S. D. Wolter, B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth: Appl. Phys. Lett. 62, 1215 (1993).ADSCrossRefGoogle Scholar
  15. T. Tachibana, Y. Yokota, K. Nishimura, K. Miyata, K. Kobashi, Y. Shintani, Diam. Relat. Mater. (to be published).Google Scholar
  16. [12]
    S. Matsumoto, Y. Sato, M. Kamo, and N. Setaka, Jpn. J. Appl. Phys. 21, L183 (1982).ADSCrossRefGoogle Scholar
  17. [13]
    M. Kamo, H. Yurimoto, and Y. Sato, Appl. Surf. Sci. 33, 553 (1988).ADSCrossRefGoogle Scholar
  18. [14]
    T. Tsuno, T. Tomikawa, S. Shikata, T. Imai, and N. Fujimori, Appl. Phys. Lett. 64, 572 (1994).ADSCrossRefGoogle Scholar
  19. [15]
    A. Badzian and T. Badzian, Diam. Relat. Mater. 2, 147 (1993).CrossRefGoogle Scholar
  20. [16]
    N. Lee and A. Badzian, Appl. Phys. Lett. 66, 2203 (1995).ADSCrossRefGoogle Scholar
  21. [17]
    C. Wild, R. Kohl, N. Herres, W. Miller-Sebert, and P. Koidl, Diam. Relat. Mater. 3, 373 (1994).CrossRefGoogle Scholar
  22. [18]
    K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Appl. Phys. Lett. 68, 1220 (1996).ADSCrossRefGoogle Scholar
  23. [19]
    K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Diam. Relat. Mater. (to be published).Google Scholar
  24. [20]
    K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Mater. Res. Soc. Symp. Proc. 416, (to be published).Google Scholar
  25. [21]
    W. J. P. van Enckevort, G. Janssen, W. Vollenberg, and L. J. Giling, J. Cryst. Growth 148, 365 (1995).ADSCrossRefGoogle Scholar
  26. [22]
    J.-P. Vitton, J.-J. Garenne, and S. Truchet, Diam. Relat. Mater. 2, 713 (1993).CrossRefGoogle Scholar
  27. [23]
    W. J. P. van Enckevort, G. Janssen, W. Vollenberg, J. J. Schermer, and L. J. Giling, Diam. Relat. Mater. 2, 997 (1993).CrossRefGoogle Scholar
  28. [24]
    L. S. Plano, in Diamond: Electronic Properties and Applications, edited by L. S. Pan and D. R. Kania ( Kluwer Academic, Boston, 1995 ) p. 78.Google Scholar
  29. [25]
    T. Tsuno, T. Imai, Y. Nishibayashi, K. Hamada, and N. Fujimori, Jpn. J. Appl. Phys. 30, 1063 (1991).ADSCrossRefGoogle Scholar
  30. [26]
    M. I. Landstrass and K. V. Ravi, Appl. Phys. Lett. 55, 1391 (1989).ADSCrossRefGoogle Scholar
  31. [27]
    H. Kawarada, M. Aoki, H. Sasaki, and K. Tsugawa, Diam. Relat. Mater. 3, 961 (1994).CrossRefGoogle Scholar
  32. [28]
    K. Hayashi, S. Yamanaka, H. Okushi, and K. Kajimura, Appl. Phys. Lett. 68, 376 (1996).ADSCrossRefGoogle Scholar
  33. [29]
    E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts,2nd ed. (Clarendon, Oxford, 1988) chap. 3.Google Scholar
  34. [30]
    S.M.Sze, Physics of Semiconductor Devices, 2nd ed. chap.5 ( John Wiley & Sons, NY, 1981 ) 292.Google Scholar
  35. [31]
    E.H.Rhoderick and R.H. Williams, Metal-Semiconductor Contacts, 2nd ed. ( Oxford University Press, Oxford, 1988 ) 20.Google Scholar
  36. [32]
    G.S.Higashi, Y.J.Chabal, G.W.Trucks, and K. Raghavachari, Appl.Phys.Lett. 56 (1990) 656.ADSCrossRefGoogle Scholar
  37. [33]
    S.Watanabe, M.Shigeno, N.Nakayama, and T.Ito, Jpn.J.Appl.Phys. 12B (1991) 3575.ADSCrossRefGoogle Scholar
  38. [34]
    H.B.Michaelson, J. Appl. Phys. 48 (1977) 4729ADSCrossRefGoogle Scholar

Copyright information

© Springer-Verlag Tokyo 1996

Authors and Affiliations

  • K. Kajimura
    • 1
  • S. Hara
    • 1
  • K. Hayashi
    • 1
  • H. Okushi
    • 1
  1. 1.Electrotechnical LaboratoryTsukuba, Ibaraki 305Japan

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