Wide-gap semiconducting materials superior to silicon
Fundamental material research on super-silicon materials with wide band gaps is described in this report. Silicon carbide and diamond are important wide band-gap materials because of their high performances of endurance under high temperature and low conductivities with high avalanche breakdown voltages. In such new materials, crystal hardness results in low crystallinity and difficult incorporation of impurity doping. To overcome the main issue, utilization of advanced silicon material technology is essential. We have grown homo-epitaxial diamond with atomically flat surfaces by clean epitaxy with controlled plasma. Also, using ideal techniques to terminate a surface by hydrogen, established on Si(111) surface, we have reduced interfacial electronic states density at metals/6H-SiC(0001) interfaces enough to generate a flat band, causing a pinning-free interface, by which we are able to control Schottky barrier heights and to achieve ideal Ohmic contacts with zero barrier heights.
KeywordsBarrier Height Schottky Barrier Diamond Film Schottky Barrier Height Reflection hIgh Energy Electron Diffraction
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