Preparation of 1-2-3 Thin Films by Sputtering Using Cylindrical Targets of Metallic Alloys
Thin films of the 1-2-3 phase were prepared by reactive sputtering from a single target of the allov Eu1Ba2Cu3. As sputtering gas a mixture of Ar and O2 was used. To prevent negative ion bombardment effects on the substrates targets with cylindrical geometry were used. Both oxygen partial pressure and the substrate temperature were varied over a wide range and it was found, that synthesis of optimum films is accomplished at deposition conditions near the stability limit of the tetragonal 1-2-3 phase in the log p versus 1/T diagram. Tc zero resistance near 91 K and complete c-axis orientation was obtained for substrate temperatures near 800° C and O2 partial pressusres near 3 × 10-2 mb (Ar partial pressure near 3 × 102 mb). For lower substrate temperatures near 700° C full c-axis orientation resulted for a decreased O2 partial pressure near 8 × 10−3 mb.
KeywordsSubstrate Temperature Total Pressure Oxygen Partial Pressure Ceramic Target Metallic Target
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