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Transport Anomalies above Room Temperature and Metal-Insulator Transition of High-Tc Oxides

  • Masatoshi Sato
  • Takashi Nishikawa
  • Jun Takeda
  • Hiroshi Harashina
  • Shinichi Shamoto
  • Kazuhisa Kakurai
  • Masakazu Nishi
Conference paper

Abstract

Drastic temperature dependence of the Hall coefficient RH has been found for La2−xSrxCuO4 and YBa2Cu3O6+x by the experimental studies up to about 1000K. It has revealed an existence of the crossover-like change of the electronic state and elucidated the formation process, with decreasing temperature, of the “low carrier density state”, the existence of which characterizes the metal-insulator transition of high-Tc oxides as a new type one. Results of phonon and other transport measurements are discussed in relation to the drastic crossover behaviors.

Keywords

Contact Resistance Hall Coefficient High Temperature Measurement Single Crystal Specimen Electronic Specific Heat Coefficient 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Tokyo 1994

Authors and Affiliations

  • Masatoshi Sato
    • 1
  • Takashi Nishikawa
    • 1
  • Jun Takeda
    • 1
  • Hiroshi Harashina
    • 1
  • Shinichi Shamoto
    • 1
  • Kazuhisa Kakurai
    • 2
  • Masakazu Nishi
    • 2
  1. 1.Department of Physics, Faculty of ScienceNagoya UniversityFuro-cho, Chikusa-ku, Nagoya 464-01Japan
  2. 2.The Institute for Solid State PhysicsUniversity of TokyoTokyo 106Japan

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