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Hybrid HTS and III-V Microwave Oscillators

  • D. B. Laubacher
  • Z. Y. Shen
  • P. S. Pang
  • C. Wilker
  • W. L. Holstein

Abstract

Low-noise oscillators operating as pure microwave frequency sources have many critical real world uses in modern radar, communications, and information processing applications. One such application would be as a local oscillator in an advanced microwave front-end receiver. Hybrid oscillators consisting of III-V FETs and high temperature superconducting (HTS) passive microwave devices have been fabricated and tested at cryogenic temperatures at Du Pont. Initial devices operating in the C-band at 4.7 GHz have utilized commercially available High Electron Mobility Transistor (HEMT) unpackaged chips. Wide band amplifiers with bandwidth from 2 to 8 GHz were fabricated and tested at 77 K show 17 dB gain. This is 3 dB higher than amplifiers operating at room temperature. Hybrid oscillators were fabricated using these wide-band amplifiers with feed back provided by a Tl2Ba2CaCu2O8 microstrip resonators. Resonators were fabricated from two-side coated HTS films on LaAlO3 substrates and had loaded Qs of 5000 with insertion loss of -6 dB. Oscillators show phase noise of less than -106 dBc (1 Hz) at 10 KHz offset from operating frequency of 4.7 GHz.

Keywords

Phase Noise High Temperature Supercondcuting High Electron Mobility Transistor Precursor Film Microwave Oscillator 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Tokyo 1992

Authors and Affiliations

  • D. B. Laubacher
    • 1
  • Z. Y. Shen
    • 1
  • P. S. Pang
    • 1
  • C. Wilker
    • 1
  • W. L. Holstein
    • 1
  1. 1.Central Research and Development DepartmentDu Pont Co.WilmingtonUSA

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