Hybrid HTS and III-V Microwave Oscillators
Low-noise oscillators operating as pure microwave frequency sources have many critical real world uses in modern radar, communications, and information processing applications. One such application would be as a local oscillator in an advanced microwave front-end receiver. Hybrid oscillators consisting of III-V FETs and high temperature superconducting (HTS) passive microwave devices have been fabricated and tested at cryogenic temperatures at Du Pont. Initial devices operating in the C-band at 4.7 GHz have utilized commercially available High Electron Mobility Transistor (HEMT) unpackaged chips. Wide band amplifiers with bandwidth from 2 to 8 GHz were fabricated and tested at 77 K show 17 dB gain. This is 3 dB higher than amplifiers operating at room temperature. Hybrid oscillators were fabricated using these wide-band amplifiers with feed back provided by a Tl2Ba2CaCu2O8 microstrip resonators. Resonators were fabricated from two-side coated HTS films on LaAlO3 substrates and had loaded Qs of 5000 with insertion loss of -6 dB. Oscillators show phase noise of less than -106 dBc (1 Hz) at 10 KHz offset from operating frequency of 4.7 GHz.
KeywordsPhase Noise High Temperature Supercondcuting High Electron Mobility Transistor Precursor Film Microwave Oscillator
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