Pinning by Oxygen Point Defects in Proton-Irradiated Ba2YCu3O7−δ
Proton irradiation of single-crystal Ba2YCu3O7−δ reproducibly increases the critical current tenfold, but does not alter the activation energy for flux creep. This can be accounted for in terms of a conventional flux pinning model. Based on this interpretation, as well as circumstantial structural evidence from TEM and X-ray studies, we propose that the chief effect of low-fluence proton irradiation is to create a higher density of oxygen point defects (which exist even in undamaged crystals). This conclusion is supported by observations of the effect of irradiation on electronic parameters.
KeywordsCritical Current Proton Irradiation Resistive Transition Oxygen Defect Flux Creep
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