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Growth and Property of High-Tc Phase in Bi(Pb)-Sr-Ca-Cu-O Sputtered Films

  • K. Maeda
  • T. Kitamura
  • H. Kobayashi
  • T. Hasegawa
  • T. Shiono
  • M. Kato
  • H. Yamamoto
  • M. Tanaka
Conference paper

Abstract

The purpose of this work is to investigate annealing process or conditions for Bi(Pb)-Sr-Ca- Cu-O sputtered films in order to promote the growth of the high-Tc phase. The composition of the specimen film was adjusted to the stoichiometry of the high-Tc phase (the atomic ratio of Bi :Pb:Sr:Ca:Cu = 1:0.2:1:1:1.5) by changing the composition of the target and sputtering conditions.

A new method, in which a MgO plate was put on the film surface, was developed to keep the concentration of Pb in the film during the anneal. The optimum annealing temperature was 830 ~ 850°C. A volume fraction of the high-Tc phase was attained above 70% in superconducting phases with good reproducibility. A preferential growth of c-axis perpendicular to the film was observed.

As a result,Tc of zero resistance of 105K and a critical current density in excess of 3x104 A/cm2 were achieved.

Keywords

Preferential Growth Annealed Film Optimum Annealing Temperature Specimen Film Sintered Bulk 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Japan 1990

Authors and Affiliations

  • K. Maeda
    • 1
  • T. Kitamura
    • 1
  • H. Kobayashi
    • 1
  • T. Hasegawa
    • 1
  • T. Shiono
    • 1
  • M. Kato
    • 2
  • H. Yamamoto
    • 2
  • M. Tanaka
    • 2
  1. 1.Chemical Material R & D DepartmentShowa Electric Wire & Cable Co., Ltd.Kanagawa 210Japan
  2. 2.College of Science & TechnologyNihon UniversityChiba 274Japan

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