A 110-K Phase BiSrCaCuO Thin Film Grown by Halide CVD
We established the conditions for growing a 110-K phase non-doped BiSrCaCuO thin film on an MgO (100) substrate. Films were grown by chemical vapor deposition (CVD) using metal-halide sources and oxygen gas in an open tube reactor. We found that the X-ray diffraction intensity of a 110-K phase BiSrCaCuO layer strongly depends on the concentration of the BiCl3 vapor in the reactor tube. The X-ray diffraction pattern of a BiSrCaCuO layer grown at an optimum concentration of BiCl3 shows that the film contained only 110-K phase crystals. Resistivity P at 300 K was P = 1 mΩ·cm to 3 mΩ·cm. Critical temperature Tc was Tc = 89 K to 97 K. Critical current density was Jc = 2 x 105 A/cm2 at 10 K for a BiSrCaCuO layer 20 μm in width.
This paper discusses the halide-CVD system and the characteristics of a 110-K phase BiSrCaCuO layer on an MgO substrate.
KeywordsCritical Temperature Chemical Vapor Deposition Reactor Tube Critical Current Density Chemical Vapor Deposition Technique
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- M. Ihara, T. Kimura, H. Yamawaki, and K. Ikeda: ASC-1988-San Francisco: IEEE Transactions on Magnetics MAG-25, 2, 2470 (1989).Google Scholar
- T. Kimura, M. Ihara, H. Yamawaki, K. Ikeda, and M. Ozeki: Proc. Advances in Superconductivity, ISS 88-Nagoya, 495 (1988).Google Scholar
- M. Ihara, T. Kimura, H. Yamawaki, and O. Ueda: Ex. Abstracts of FED HiTcSc-ED Workshop, June, 1989, Hokkaido, Japan, 135 and 309.Google Scholar