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A 110-K Phase BiSrCaCuO Thin Film Grown by Halide CVD

  • M. Ihara
  • H. Yamawaki
  • T. Kimura
  • H. Nakao
Conference paper

Abstract

We established the conditions for growing a 110-K phase non-doped BiSrCaCuO thin film on an MgO (100) substrate. Films were grown by chemical vapor deposition (CVD) using metal-halide sources and oxygen gas in an open tube reactor. We found that the X-ray diffraction intensity of a 110-K phase BiSrCaCuO layer strongly depends on the concentration of the BiCl3 vapor in the reactor tube. The X-ray diffraction pattern of a BiSrCaCuO layer grown at an optimum concentration of BiCl3 shows that the film contained only 110-K phase crystals. Resistivity P at 300 K was P = 1 mΩ·cm to 3 mΩ·cm. Critical temperature Tc was Tc = 89 K to 97 K. Critical current density was Jc = 2 x 105 A/cm2 at 10 K for a BiSrCaCuO layer 20 μm in width.

This paper discusses the halide-CVD system and the characteristics of a 110-K phase BiSrCaCuO layer on an MgO substrate.

Keywords

Critical Temperature Chemical Vapor Deposition Reactor Tube Critical Current Density Chemical Vapor Deposition Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    M. Ihara, T. Kimura, H. Yamawaki, and K. Ikeda: ASC-1988-San Francisco: IEEE Transactions on Magnetics MAG-25, 2, 2470 (1989).Google Scholar
  2. [2]
    T. Kimura, M. Ihara, H. Yamawaki, K. Ikeda, and M. Ozeki: Proc. Advances in Superconductivity, ISS 88-Nagoya, 495 (1988).Google Scholar
  3. [3]
    M. Ihara, T. Kimura, H. Yamawaki, and O. Ueda: Ex. Abstracts of FED HiTcSc-ED Workshop, June, 1989, Hokkaido, Japan, 135 and 309.Google Scholar

Copyright information

© Springer Japan 1990

Authors and Affiliations

  • M. Ihara
    • 1
  • H. Yamawaki
    • 1
  • T. Kimura
    • 1
  • H. Nakao
    • 1
  1. 1.Fujitsu Laboratories Ltd.AtsugiJapan

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