A 110-K Phase BiSrCaCuO Thin Film Grown by Halide CVD

Abstract

We established the conditions for growing a 110-K phase non-doped BiSrCaCuO thin film on an MgO (100) substrate. Films were grown by chemical vapor deposition (CVD) using metal-halide sources and oxygen gas in an open tube reactor. We found that the X-ray diffraction intensity of a 110-K phase BiSrCaCuO layer strongly depends on the concentration of the BiCl₃ vapor in the reactor tube. The X-ray diffraction pattern of a BiSrCaCuO layer grown at an optimum concentration of BiCl₃ shows that the film contained only 110-K phase crystals. Resistivity P at 300 K was P = 1 mΩ·cm to 3 mΩ·cm. Critical temperature Tc was Tc = 89 K to 97 K. Critical current density was Jc = 2 x 10⁵ A/cm² at 10 K for a BiSrCaCuO layer 20 μm in width.

This paper discusses the halide-CVD system and the characteristics of a 110-K phase BiSrCaCuO layer on an MgO substrate.