Effects of Heat Treatment on Crystalline Quality of Er-Ba-Cu-O Thin Films
ErBa2 Cu3 O7 epitaxial films are prepared on heated MgO substrates by r.f. magnetron sputtering, and changes in crystallinity during annealing are examined by an X-ray diffraction method. Plane spacing parallel to film plane (001) is as large as that in the oxygen deficient semiconductor phase. However, the film becomes a superconductor at low temperatures. Recrystallization of the amorphous region in the as-sputtered film occurs during the annealing. Plane spacing decreases and crystallinity is improved in this process. It is assumed that plane spacing enlargement is due to stress related to epitaxial growth.
KeywordsEpitaxial Growth Film Plane Plane Spacing Strontium Titanate Annealed Film
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- K. Nakamura, T. Ilatano, A. Matsushita, T. Oguchi, T. Matsumoto, and K. Ogawa, Jpn. J. Appl. Phys. 26, L.791 (1987).Google Scholar