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Epitaxial Y-Ba-Cu-O Films on Si with Intermediate Layer by RF Magnetron Sputtering

  • S. Miura
  • H. Tsuge
  • T. Yoshitake
  • S. Matsubara
  • T. Satoh
  • Y. Miyasaka
  • N. Shohata
Conference paper

Abstract

Epitaxial films of Y-Ba-Cu-O were obtained on Si substrate using epitaxial intermediate layer consisting of SrTiO3(or BaTiO3)/MgAl2O4. MgAl2O4 was epitaxially grown on Si(100) substrate by chemical vapor deposition, and then SrTiO3 or BaTiO3 was also epitaxially grown on MgAl2O4 layer by means of RF magnetron sputtering. Y-Ba-Cu-O films were prepared on SrTiO3(BaTiO3)/MgAl2O4/Si substrates by RF magnetron sputtering and their epitaxial growth was confirmed by RHEED observation and X-ray diffraction measurements. Epitaxial orientations of Y-Ba-Cu-O films varied in dependence on RF input power; lower RF power resulted in c-axis oriented film and higher RF power resulted in a-axis oriented film. Preparation of Y-Ba-Cu-O directly on MgAl2O4/Si was also studied, but only randomly oriented polycrystal film has been obtained so far. In sputter Auger depth measurement, any notable diffusion between Y-Ba-CuO film and the substrates was not observed. Resistive superconducting transitions with zero resistance at 65K on SrTiO3/MgAl2O4/Si and at 70K on BaTiO3/MgAl2O4/Si were observed.

Keywords

Critical Current Density Epitaxial Film Reflection High Energy Electron Diffraction Reflection High Energy Electron Diffraction Pattern Oriented Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Japan 1989

Authors and Affiliations

  • S. Miura
    • 1
  • H. Tsuge
    • 2
  • T. Yoshitake
    • 1
  • S. Matsubara
    • 1
  • T. Satoh
    • 3
  • Y. Miyasaka
    • 1
  • N. Shohata
    • 1
  1. 1.Fundamental Research LaboratoriesNEC CorporationMiyamae-ku, Kawasaki, 213Japan
  2. 2.Microelectronics Research LaboratoriesNEC CorporationMiyamae-ku, Kawasaki, 213Japan
  3. 3.Resources and Environment Protection Research LaboratoriesNEC CorporationMiyamae-ku, Kawasaki, 213Japan

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