MO-CVD of HTcS

Abstract

Thin films of HTcS, e.g. BiSrCaCu-oxides or YBa₂Cu₃O₇, may be prepared on suitable substrates (e.g. SrTiO₃) by metal-organic chemical vapour deposition MO-CVD, as recently indicated in the literature. However, for optimal process conditions and film properties, a number of variables must be controlled. These include the selection of appropriate precursors with sufficient volatility and stability at a work temperature of + 200 °C, like metal ß-diketonates. The thermochemistry of these compounds must be such as to provide metal oxide deposits. After these steps (selection, vapour pressure measurements and thermochemistry) have been taken, the actual MO-CVD process will be carried out. The progress in the TNO programme will be reported at the meeting.