Advertisement

Prospects for Superconducting Electronics

  • Yasutsugu Takeda
Conference paper

Abstract

Information systems in the 21st century are spotlighted and superconducting electronics are stressed as one of the key technologies. Present status of superconducting electronics is reviewed with some historical backgrounds. “Quantum flux parametron” and three terminal devices are given as examples of 2nd generation technology in superconducting electronics. A tentative goal and the state of the art of high-Tc superconductors are summarized for superconducting LSIs at Liq. N2 temperature.

Keywords

Power Dissipation Critical Current Density Logic Gate Josephson Junction Bismuth Oxide 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Y. Takeda, Abstracts of Optoelectronics: 1990 and Beyond, Killarney 25 (1988) (Ireland).Google Scholar
  2. [2]
    B. D. Josephson, Phys. Lett., 1, 251 (1962).ADSMATHCrossRefGoogle Scholar
  3. [3]
    P. W. Anderson and J. M. Rowell, Phys. Rev. Lett., 10, 230 (1963).ADSCrossRefGoogle Scholar
  4. [4]
    J. Matisoo, Proc. IEEE., 55, 172 (1967).CrossRefGoogle Scholar
  5. [5]
    S. Yano et al., IEEE Trans. Magn., MAG-23, 1472 (1987).ADSCrossRefGoogle Scholar
  6. [6]
    H. Nakagawa et al., Extended Abstracts of the 18th Conference on Solid State Devices and Materials, Tokyo, 751 (1986).Google Scholar
  7. [7]
    S. Kotani et al., ISSCC 88 Digest of Technical Papers, 150 (1988).Google Scholar
  8. [8]
    Y. Wada et al., ISSCC 88 Digest of Technical Papers, 84 (1988).Google Scholar
  9. [9]
    E. Goto, 1st Riken Symp. of Josephson Electronics, 48, Mar. (1984) (in Japanese).Google Scholar
  10. [10]
    K. Loe and E. Goto, IEEE Trans. Magn., MAG-21 , 884 (1985).ADSCrossRefGoogle Scholar
  11. [11]
    Y. Harada et al., IEEE Trans. Magn., MAG-23, 8301, (1987).Google Scholar
  12. [12]
    T. D. Clark et al., J. Appl. Phys., 51, 2736 (1980).ADSCrossRefGoogle Scholar
  13. [13]
    H. Takayanagi et al., Phys. Rev. Lett., 54, 2449 (1985).ADSCrossRefGoogle Scholar
  14. [14]
    T. Nishino et al., IEEE Electron Dev. Lett., EDL-6, 297 (1985).ADSCrossRefGoogle Scholar
  15. [15]
    T. Nishino et al., submitted to IEEE Electron Dev. Lett.Google Scholar
  16. [16]
    H. Maeda et al., Jpn. J. Appl. Phys., 27, L209 (1988).ADSCrossRefGoogle Scholar
  17. [17]
    Z. Z. Sheng et al., Appl. Phys. Lett., 52, 1738 (1988).ADSCrossRefGoogle Scholar
  18. [18]
    S. S. P. Parkin et al., Phys. Rev. Lett., 60, 2539 (1988).ADSCrossRefGoogle Scholar
  19. [19]
    T. Terashima et al., Jpn. J. Appl. Phys., 27, L91 (1988).ADSCrossRefGoogle Scholar
  20. [20]
    R. H. Koch et al., Appl. Phys. Lett., 51, 200 (1987).ADSCrossRefGoogle Scholar
  21. [21]
    H. Nakane et al., Jpn. J. Appl. Phys., 26, L1925 (1987).ADSCrossRefGoogle Scholar
  22. [22]
    J. S. Tsai et al., Jpn. J. Appl. Phys., 26, L701 (1987).ADSCrossRefGoogle Scholar
  23. [23]
    T. Nishino et al., Jpn. J. Appl. Phys., 26, L1320 (1987).ADSCrossRefGoogle Scholar

Copyright information

© Springer Japan 1989

Authors and Affiliations

  • Yasutsugu Takeda
    • 1
  1. 1.Central Research LaboratoryHitachi, Ltd.Kokubunji, Tokyo, 185Japan

Personalised recommendations