Preparation and Characterization of Bi-Sr-Ca-Cu-O Thin Films by Ion Beam Sputtering

  • Kazuki Yoshimura
  • Hajime Kuwahara
  • Sakae Tanemura
Conference paper


Thin films of the Bi-Pb-Sr-Ca-Cu-O system have been prepared by ion beam co-sputtering on MgO (100) with a sintered Bi2SrCaCu2Oy and a metal Pb as targets. Post deposition ex situ annealing were required for obtaining Bi-Sr-Ca-Cu-O superconducting films. The characterization of the prepared films were carried out by measuring the temperature dependence of the resistivity, X-ray diſſractometry, electron diſſractometry, SEM observation and EPMA spectra. These results indicate that obtained film has highly [001] orientation with a lattice constant c=30.86 Å and consists of a low Tc likely single phase of Bi-Sr-Ca-Cu-O system. The optimum annealing temperature was 840°C in oxygen environment. The pre-sputtering of the substrate has not played any important role for the increasing of the volume fraction of the film with a preferential orientation.


EPMA Analysis Post Annealing Process Reflection Electron Diffraction Electron Diffractometry EPMA Spectrum 
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  1. [1]
    H.Maeda,Y.Tanaka M.Fukutomi T.Asano Jpn. J. Appl. Phys. 27, L209 (1988)ADSCrossRefGoogle Scholar
  2. [2]
    T.Hashimoto T.Kosaka Y.Yoshida K.Fueki H.Koinuma Jpn. J. Appl. Phys. 27, L384 (1988)ADSCrossRefGoogle Scholar
  3. [3]
    H.Koinuma, M.Kawasak, S.Nagata, K.Takeuchi , K.Fueki, Jpn. J. Appl. Phys. 27, L376 (1988)ADSCrossRefGoogle Scholar
  4. [4]
    M.Nakao, H.Kuwahara, R.Yuasa, H.Mukaida , A.Mizukami, Jpn. J. Appl. Phys. 27, L378 (1988)ADSCrossRefGoogle Scholar
  5. [5]
    M.Fukutomi, J.Machida, Y.Tanaka, T.Asano, H.Maeda , K.Koshino, Jpn. J. Appl. Phys. 27, L632 (1988)ADSCrossRefGoogle Scholar
  6. [6]
    K.Kuroda, M.Mukaida, M.Yamamoto , S.Miyazawa, Jpn. J. Appl. Phys. 27, L625 (1988)ADSCrossRefGoogle Scholar
  7. [7]
    H.Adachi, Y.Ichikawa, K.Setune, S.Hatta, K.Hirochi , K.Wasa, Jpn. J. Appl. Phys. 27, L623 (1988) / Y.Ichikawa, H.Adachi, K.Hirochi, K.Setune, S.Hatta , K.Wasa, Phys. Rev. B38, L765 (1988)Google Scholar
  8. [8]
    H.Nasu, S.Makida, Y.Ibara, T.Kato, T.Imura , Y.Osaka, Jpn. J. Appl. Phys. 27, L536 (1988)ADSCrossRefGoogle Scholar
  9. [9]
    K.Yoshimura, S.Nogawa S.Tanemura, High Tc SuperconductivityThin Films & DevicesProc. SPIE 948 99 (1988)CrossRefGoogle Scholar
  10. [10]
    S.A.Sunshine Phys. Rev. B38 893 (1988)ADSCrossRefGoogle Scholar
  11. [11]
    M.Takano Jpn. J. Appl. Phys. 27, L101 (1988)CrossRefGoogle Scholar
  12. [12]
    Y.Syonoet ,Jpn. J. Appl. Phys, 27, L569 (1988)ADSCrossRefGoogle Scholar
  13. [13]
    T.Kajitani, K.Kusaba, M.Kikuchi, N.Kobayashi, Y.Syono, T.B.Williams , M.Hirabayashi, Jpn. J. Appl. Phys. 27, L589 (1988)Google Scholar
  14. [14]
    M.Onoda, A.Yamamoto, E.Takayama-Muromachi S.Takenaka, Jpn. J. Appl. Phys., 27, L833 (1988)ADSCrossRefGoogle Scholar
  15. [15]
    J.M.Tarascon,Phys. Rev. B27,9382 (1988)Google Scholar
  16. [16]
    R.M.Hazen,Phys.Rev. Lett. 60 1174(1988)ADSCrossRefGoogle Scholar
  17. [17]
    S.Sueno, R.Ishizaki, I.Nakai, K.Ohishi , A.Ono, Jpn. J. Appl. Phys. 27, L1463 (1988)ADSCrossRefGoogle Scholar
  18. [18]
    E.Takayama-Muromachi ,Jpn. J. Appl. Phys. 27, L556 (1988)CrossRefGoogle Scholar
  19. [19]
    A.Ono, K.Kosuda, S.Sueno , Y.Ishizawa, Jpn. J. Appl. Phys. 27, L1007 (1988)ADSCrossRefGoogle Scholar
  20. [20]
    Y.Matsui, H.Maeda, Y.Tanaka, E.Takayama-Muromachi, S.Takekawa ,S.Horiuchi, Jpn. J. Appl. Phys. 27, L827 (1988)ADSCrossRefGoogle Scholar
  21. [21]
    J.Akimitsu, A.Yamazaki, H.Sawa , H.Fujiki, Jpn. J. Appl. Phys. 26, L2080 (1987)ADSCrossRefGoogle Scholar
  22. [22]
    C.Michel, M.Hervieu, M.Borol, A.Gr,in, F.Desl,es, J.Provost , B.Raveau, Z. Phys. B68, 421 (1987)CrossRefGoogle Scholar
  23. [23]
    J.P.Franck, J.Jung, W.A.Miner , M.A.K.Mohamed, Phys. Rev. B38, 754 (1988)ADSGoogle Scholar
  24. [24]
    Y.Yamada, S.Murase, Jpn. J. Appl. Phys. 27, L996 (1988)Google Scholar
  25. [25]
    for examplPowder Diffraction File, Inorganic, Search Manual, Inter. Centr. for Diffraction DataSwarthmore, USA, (1987)Google Scholar
  26. [26]
    T.Yoshitake, T.Satoh, Y.Kubo , H.Igarashi, Jpn. J. Appl. Phys. 27, L1261 (1988)Google Scholar

Copyright information

© Springer Japan 1989

Authors and Affiliations

  • Kazuki Yoshimura
    • 1
  • Hajime Kuwahara
    • 2
  • Sakae Tanemura
    • 1
  1. 1.Ceramic Science DepartmentGovernment Industrial Research Institute, NagoyaKita-ku, Nagoya, 462Japan
  2. 2.Department of Development of Thin Film ApplicationNisshin Electric Corp. Ltd.Ukyo-ku, Kyoto, 615Japan

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