Advertisement

Characteristics in the Growth of the YBa2Cu3Ox and YBaSrCu3Ox Crystalline Films

  • Masashi Yoshida
Conference paper

Abstract

The change of the structure of the sputter-deposited amorphous films of YBa2Cu3Ox and YBaSrCu3Ox by the thermal annealing was investigated using the SEM and the X-ray diffraction spectrometry. The YBa2Cu3Ox films crystallized in the distorted perovskite structure when annealed above 920°C while the YBaSrCu3Ox above 980°c The merging of (200), (020) and (006) lines was observed in the YBa2Cu3Ox annealed at 800°C or in the YBaSrCu3Ox annealed between 800°C and 940°C. The existence of the antistructure defects between Y and Ba (Sr) was pointed out in these films. It was also found that by the annealing of the films of YBaSrCu3Ox , the YBa2Cu3Ox crystals grew preferentially below 900C while the YBaSrCu3Ox crystals grew above 900°C.

Keywords

Diffraction Line Orthorhombic Phase Oriented Growth Maximum Annealing Temperature Distorted Perovskite Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    M. K. Wu, J. R. Ashburn, C. J. Torng, P. H. Hor, R. L. Meng, L. Gao, Z. J. Huang, Y. Q. Wang and C. W. Chu, Phys. Rev. Lett. 58, 908 (1987).CrossRefADSGoogle Scholar
  2. [2]
    H. Takagi, S. Uchida, H. Sato, H. Ishii, K. Kishio, K. Kitazawa, K. Fueki and S. Tanaka, Jpn. J. Appl. Phys. Lett. 26, L601 (1987).CrossRefADSGoogle Scholar
  3. [3]
    S. Kanbe, T. Hasegawa, M. Aoki, T. Nakamura, H. Koinuma, K. Kishio, K. Kitazawa, H. Takagi, S. Uchida, S. Tanaka and K. Fueki, Jpn. J. Appl. Phys. Lett. 26, L613 (1987) .CrossRefADSGoogle Scholar
  4. [4]
    A. Ono, T. Tanaka, H. Nozaki and Y. Ishizawa, Jpn. J. Appl. Phys. Lett. 26 L1687 (1987).CrossRefADSGoogle Scholar
  5. [5]
    B. W. Veal, W. K. Kwok, A. Umezawa, G. W. Crabtree, J. D. Jorgensen, J. W. Downey, L. J. Nowicki, A. W. Mitchell, A. P. Paulikas and C. H. Sowers, Appl. Phys. Lett. 51, 279 (1987).CrossRefADSGoogle Scholar
  6. [6]
    E. T. Muromachi, Y. Uchida, K. Yukino, T. Tanaka and K. Kato, Jpn. J. Appl. Phys. Lett. 26, L665 (1987).CrossRefGoogle Scholar
  7. [7]
    E. T. Muromachi, Y. Uchida, M. Ishii, T. Tanaka and K. Kato, Jpn. J. Appl. Phys. Lett. 26, L1156 (1987).CrossRefGoogle Scholar
  8. [8]
    Y. Kubo, T. Yoshitake, J. Tabuchi, Y. Nakabayashi, A. Ochi, K. Utsumi, H. Igarashi and M. Yonezawa, Jpn. J. Appl. Phys. Lett. 26, L768 (1987).CrossRefADSGoogle Scholar
  9. [9]
    M. Komuro, Y. Kozono, Y. Yazawa, T. Ohno, M. Hanazono, S. Matsuda and Y. Sugita, Jpn. J. Appl. Phys. Lett. 26, L1907 (1987).CrossRefADSGoogle Scholar
  10. [10]
    E. T. Muromachi, Y. Uchida, Y. Matsui and K. Kato, Jpn. J. Appl. Phys. Lett. 26, L476 (1987) .CrossRefGoogle Scholar
  11. [11]
    F. A. Kroger, The Chemistry of Imperfect Crystals, (Wiley, New York, 1984) p406.Google Scholar

Copyright information

© Springer Japan 1989

Authors and Affiliations

  • Masashi Yoshida
    • 1
  1. 1.Advanced Technology Research LaboratoriesSumitomo Metal IndustriesAmagasaki, Hyogo, 660Japan

Personalised recommendations