Preparation and Electrical Properties of 107K-BiSrCaCuO Superconducting Thin Films

  • Masashi Mukaida
  • Ken-Ichi Kuroda
  • Yasuo Tazoh
  • Shintaro Miyazawa


BiSrCaCuO superconducting oxide thin films with a zero-resistance temperature of 107K were prepared on MgO(100) substrates by the sequential deposition technique of Bi, SrF2, CaF2 and Cu, followed by annealing in O2 . The temperature dependence of the Hall coefficient and resistivity were measured. The Hall coefficient increased as the temperature decreased. The carrier in the film was hole-like. The temperature dependence of the inverse Hall coefficient was linear and the extrapolation to zero degrees passed through the origin. In addition, the extrapolation of the normal resistance to zero degrees always intersected the resistance axis on the negative side.


Magnetic Susceptibility Thin Sheet Hall Coefficient Annealed Film Normal Resistance 
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  1. 1.
    H. Maeda, Y. Tanaka, M. Fujitomi, and T. Asano, Jpn. J. Appl. Phys.27(1988)L209ADSCrossRefGoogle Scholar
  2. 2.
    C. Michel H. Hervieu, M. M. Borel, A. Grandin, F. Deslandes, J. Provost and B. Raveau, Z. Phys. B68(1987)421ADSCrossRefGoogle Scholar
  3. 3.
    J. Akimitsu A. Yamazaki, H. Sawa and H. Fujiki, Jpn. J. Appl. Phys. 26(1987)L2080.ADSCrossRefGoogle Scholar
  4. 4.
    E. Takayama-Muroraachi, Y. Uchida, A. Ono, F. Izumi, M. Onoda, Y. Matsui, K. Kosuda, S. Takekawa and K. Kato, Jpn. J. Appl. Phys. 27(1988)L556ADSCrossRefGoogle Scholar
  5. 5.
    Y. Matsui, H. Maeda, Y. Tanaka and S. Horiuchi, Jpn. J. Appl. Phys. 27(1988)L361ADSCrossRefGoogle Scholar
  6. 6.
    H. Takagi, H. Eisaki, S. Uchida, A. Maeda, S. Tajima, K. Uchinokura and S. Tanaka, Nature. Vol. 332. 24. March(1988)334CrossRefGoogle Scholar
  7. 7.
    K. Kuroda, M. Mukaida, M. Yamamoto, and S. Miyazawa, Jpn. J. Appl. Phys. 27(1988)L625ADSCrossRefGoogle Scholar
  8. 8.
    K. Kuroda, M. Mukaida and S. Miyazawa, Ext. Abst. 20th Conf. Solid State Devices and Materials, Tokyo(1988)431Google Scholar
  9. 9.
    R. Micnas and J. Ranninger, Phys. Rev. Rapid Comm. Vol. 36(1987)4051ADSGoogle Scholar
  10. 10.
    M. Naito, R. H. Hammond, B. Oh, M. R. Han, J. W. P. Hsu, P. Rosenthal, A. F. Marshall, M. R.Google Scholar
  11. 11.
    Beasley, T. H. Geballe and A. Kapitulnik, J. Material Res. 2(1987)713CrossRefGoogle Scholar
  12. P. M. Mankiewich, R. E. Howard, W. J. Skocpol, A. H. Dayem, A. Ourmazd, M. G. Young and E. Good, Mat. Res. Soc. Symp. Proc. Vol 99(1988)119CrossRefGoogle Scholar
  13. 12.
    S. W. Tozer, A. W. Kleinsasser, T. Penney, D. Kaiser and F. Holtzberg, Phys. Rev. Lett.59(1987)1768ADSCrossRefGoogle Scholar
  14. 13.
    N. Murayama et al., Jpn. J. Appl. Phys. (to be published)Google Scholar
  15. 14.
    M. Suzuki, and T. Murakami, Jpn. J. Appl. Phys. 27(1987)L524CrossRefGoogle Scholar
  16. 15.
    S-W. Cheong, S. E. Brown, Z. Fisk, R. S. Kwok, J. D. Thompson,E. Zirngiebl, G. Gruner, D. E. Peterson, G. L. Wells, R. B. Schwarz, and J. R. Cooper, Phys. Rev. B36(1987)3913ADSGoogle Scholar
  17. 16.
    K. Char, Mark Lee, R. W. Barton, A. F. Marshall, I. Bozovic, R. H. Hammond, M. R. Beasley, T. H.Geballe, A. Kapitulnik and S. S. Landrman, Phys. Rev. Rapid Comm. Vol. 38(1988)834ADSGoogle Scholar

Copyright information

© Springer Japan 1989

Authors and Affiliations

  • Masashi Mukaida
    • 1
  • Ken-Ichi Kuroda
    • 1
  • Yasuo Tazoh
    • 1
  • Shintaro Miyazawa
    • 1
  1. 1.NTT LSI LaboratoriesAtsugi, 243-01Japan

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