Combined Quantum Control of Electron-and Photon-Systems in Semiconductor Mesoscopic Structures: Toward an Ultimate Goal of Semiconductor Light Emitters
This paper reviews two recent topics regarding physical phenomena and possible device applications which originate from combined quantum control of both electron- and photon-systems in semiconductor mesoscopic structures. The first concerns experimental results involving the systematic alteration of excitonic spontaneous emissions through continuous tuning of emission wavelength by electric fields applied to GaAs quantum wells located inside half-wavelength planar cavities sandwiched between pairs of A1GaAs distributed Bragg reflectors. The result indicates a possibility of highly efficient and extremely high speed light emitting devices, even including beam steering, which operate with the switching of the coupling efficiency of the spontaneous emission in the micro-cavities. The second is a theoretical proposal for novel semiconductor surface-emitting lasers. In the proposed lasers, all spontaneous emission is coupled into a single lasing mode. Quantum boxes biased by a dc-electric field separate the emission line from the absorption line by an image-charge-induced increase in the electric field, resulting in a perfect population inversion at an arbitrarily low pump rate. As a result, the threshold current of the proposed laser could be reduced down to below 100nA, which is ultimately low for a given decay rate of photons in the cavity,~1011s−1.
KeywordsSpontaneous Emission Quantum Well Distribute Bragg Reflector Single Lasing Mode Single Quantum Well
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