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Luminescence Properties of Disordered Superlattices

  • Akio Sasaki
  • Kazuyuki Uno
  • Susumu Noda
Conference paper

Summary

A disordered superlattice, which can be considered as an example of a disordered crystalline semiconductor, was fabricated, and its luminescence properties were investigated. It has been experimentally confirmed that the AlAs/AlxGa1−xAs disordered superlattice exhibits remarkable luminescence capability. Based on the investigation of the optical absorption, the time-resolved photoluminescence, and the luminescence temperature dependence, it was concluded that the unusual luminescence capability could be interpreted in terms of the Lifshitz model of localization created by artificial disordering in the physical thickness of the superlattice.

Keywords

Luminescence Property Crystalline Semiconductor Luminescence Wavelength Artificial Disorder Lifshitz Model 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Akio Sasaki
  • Kazuyuki Uno
  • Susumu Noda
    • 1
  1. 1.Department of Electrical EngineeringKyoto UniversityKyoto, 606Japan

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