Luminescence Properties of Disordered Superlattices
A disordered superlattice, which can be considered as an example of a disordered crystalline semiconductor, was fabricated, and its luminescence properties were investigated. It has been experimentally confirmed that the AlAs/AlxGa1−xAs disordered superlattice exhibits remarkable luminescence capability. Based on the investigation of the optical absorption, the time-resolved photoluminescence, and the luminescence temperature dependence, it was concluded that the unusual luminescence capability could be interpreted in terms of the Lifshitz model of localization created by artificial disordering in the physical thickness of the superlattice.
KeywordsLuminescence Property Crystalline Semiconductor Luminescence Wavelength Artificial Disorder Lifshitz Model
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