Mesoscopic Structure in Lattice-Mismatched Heteroepitaxial Interface Layers
Low dimensional mesoscopic structures are important for the realization of electron wave and quantum optoelectronic devices. In this study, we propose to utilize three-dimensional (3D) growth, which occurs at the initial stage of the heteroepitaxial growth of a lattice-mismatched system, for the realization of a mesoscopic structure. InAs layers grown 3-dimensionally on (001) just-oriented and on 3.5° off-angled GaAs substrates were investigated by photoluminescence (PL) measurement and by transmission electron microscopy. A strong PL emission was observed from the 3D grown InAs samples. Both TEM observation and PL measurement suggest that the strong PL emission would be caused by the quantum effect of the 3D InAs layer sandwiched by the GaAs layers.
KeywordsGaAs Substrate Misfit Dislocation Transmission Electron Micro Heteroepitaxial Growth Mesoscopic Structure
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