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Mesoscopic Structure in Lattice-Mismatched Heteroepitaxial Interface Layers

  • Masao Tabuchi
  • Susumu Noda
  • Akio Sasaki

Summary

Low dimensional mesoscopic structures are important for the realization of electron wave and quantum optoelectronic devices. In this study, we propose to utilize three-dimensional (3D) growth, which occurs at the initial stage of the heteroepitaxial growth of a lattice-mismatched system, for the realization of a mesoscopic structure. InAs layers grown 3-dimensionally on (001) just-oriented and on 3.5° off-angled GaAs substrates were investigated by photoluminescence (PL) measurement and by transmission electron microscopy. A strong PL emission was observed from the 3D grown InAs samples. Both TEM observation and PL measurement suggest that the strong PL emission would be caused by the quantum effect of the 3D InAs layer sandwiched by the GaAs layers.

Keywords

GaAs Substrate Misfit Dislocation Transmission Electron Micro Heteroepitaxial Growth Mesoscopic Structure 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    Ando S, Fukui T (1989) J Cryst Growth 98: 646ADSCrossRefGoogle Scholar
  2. 2.
    Fukui T, Saito H (1988) J Vac Sci Technol B4: 1373ADSGoogle Scholar
  3. 3.
    Fujita S, Nakaoka Y, Uemura T, Tabuchi M, Noda S, Takeda Y, Sasaki A (1989) J Cryst Growth 95: 224ADSCrossRefGoogle Scholar
  4. 4.
    Tabuchi M, Noda S, Sasaki A (1990) J Cryst Growth 99: 315ADSCrossRefGoogle Scholar
  5. 5.
    Tabuchi M, Noda S, Sasaki A (1990) In: Proceedings of the First International Conference and Exhibition of Computer Applications, Science and Engineering. North-Holland, Amsterdam, p 711 Tokyo, Japan, PII-24Google Scholar

Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Masao Tabuchi
  • Susumu Noda
  • Akio Sasaki
    • 1
  1. 1.Department of Electrical EngineeringKyoto UniversityKyoto, 606Japan

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