Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching

  • Eiichi Ishikawa
  • Susumu Fukatsu
  • Kentaro Onabe
  • Yasuhiro Shiraki
  • Ryoichi Ito
Conference paper


Ultrafine AlGaAs/GaAs quantum well wire structures as small as 35nm, with smooth sidewalls and low damage, which would otherwise be difficult to produce, e.g., by conventional dry etching, have been successfully fabricated by combining electron beam lithography and two-step wet chemical etching. Photoluminescence measurement has revealed that the thickness of the nonradiative “dead layer” of sidewalls formed during etching is remarkably reduced, even for the finest wires in the quantum regime (35nm), and the associated blue shift of emission due to the two-dimensional quantum confinement of the carriers has been clearly observed.


Dead Layer Fine Wire Surface Recombination Velocity Wire Structure Wire Width 
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Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Eiichi Ishikawa
    • 1
  • Susumu Fukatsu
    • 2
  • Kentaro Onabe
    • 1
  • Yasuhiro Shiraki
    • 2
  • Ryoichi Ito
    • 2
  1. 1.Department of Applied PhysicsThe University of TokyoTokyo, 113Japan
  2. 2.Research Center for Advanced Science and Technology (RCAST)The University of TokyoTokyo, 153Japan

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