Skip to main content

Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching

  • Conference paper
Science and Technology of Mesoscopic Structures

Summary

Ultrafine AlGaAs/GaAs quantum well wire structures as small as 35nm, with smooth sidewalls and low damage, which would otherwise be difficult to produce, e.g., by conventional dry etching, have been successfully fabricated by combining electron beam lithography and two-step wet chemical etching. Photoluminescence measurement has revealed that the thickness of the nonradiative “dead layer” of sidewalls formed during etching is remarkably reduced, even for the finest wires in the quantum regime (35nm), and the associated blue shift of emission due to the two-dimensional quantum confinement of the carriers has been clearly observed.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. Arakawa Y, Sakaki H (1982) Appl Phys Lett 40: 939–941

    Article  ADS  Google Scholar 

  2. Sakaki H (1980) Jpn J Appl Phys 19: L735 - L738

    Article  ADS  Google Scholar 

  3. Petroff PM, Gossard AC, Logan RA, Wiegmann W (1982) Appl Phys Lett 41: 635–638

    Article  ADS  Google Scholar 

  4. Tsuchiya M, Gaines JM, Yan RH, Simes RJ, Holtz PO, Molden LA, Petroff PM (1991) Phys Rev Lett 62: 466–469

    Article  ADS  Google Scholar 

  5. Kapon E, Hwang DM, Bhat R (1989) Phys Rev Lett 63: 430–433

    Article  ADS  Google Scholar 

  6. Hirayama Y, Tarucha S, Suzuki Y, Okamoto H (1988) Phys Rev B37: 2774–2777

    Article  ADS  Google Scholar 

  7. Izrael A, Sermage B, Marzin JY, Ougazzaden A, Azoulay R, Etrillard J, Uhierry-Mieg V, Henry L (1990) Appl Phys Lett 56: 830–832

    Article  ADS  Google Scholar 

  8. Maile BE, Forchel A, Germann R, Straka J, Korte L, Thanner C (1990) Appl Phys Lett 57: 807–809

    Article  ADS  Google Scholar 

  9. Katoh T, Nagamune Y, Li GP, Fukatsu S, Shiraki Y, Ito R (1990) Appl Phys Lett 57: 1212–1214

    Article  ADS  Google Scholar 

  10. Iida S, Ito K (1971) J Electrochem Soc 118: 768–771

    Article  Google Scholar 

  11. Tarui Y, Komiya Y, Harada Y (1971) J Electrochem Soc 118: 118–122

    Article  Google Scholar 

  12. Maile BE, Forchel A, Germann R, Menshig A, Meier HP, Grutzmacher D (1988) J Vac Sci Technol B6: 2308–2311

    Article  Google Scholar 

  13. Maile BE, Forchel A, Germann R, Grutzmacher D (1989) Appl Phys Lett 54: 1552–1554

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 1992 Springer Japan

About this paper

Cite this paper

Ishikawa, E., Fukatsu, S., Onabe, K., Shiraki, Y., Ito, R. (1992). Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching. In: Namba, S., Hamaguchi, C., Ando, T. (eds) Science and Technology of Mesoscopic Structures. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66922-7_39

Download citation

  • DOI: https://doi.org/10.1007/978-4-431-66922-7_39

  • Publisher Name: Springer, Tokyo

  • Print ISBN: 978-4-431-66924-1

  • Online ISBN: 978-4-431-66922-7

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics