Summary
Ultrafine AlGaAs/GaAs quantum well wire structures as small as 35nm, with smooth sidewalls and low damage, which would otherwise be difficult to produce, e.g., by conventional dry etching, have been successfully fabricated by combining electron beam lithography and two-step wet chemical etching. Photoluminescence measurement has revealed that the thickness of the nonradiative “dead layer” of sidewalls formed during etching is remarkably reduced, even for the finest wires in the quantum regime (35nm), and the associated blue shift of emission due to the two-dimensional quantum confinement of the carriers has been clearly observed.
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© 1992 Springer Japan
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Ishikawa, E., Fukatsu, S., Onabe, K., Shiraki, Y., Ito, R. (1992). Ultrafine AlGaAs/GaAs Quantum-Well Wire Fabrication by Combining Electron Beam Lithography and Two-Step Wet Chemical Etching. In: Namba, S., Hamaguchi, C., Ando, T. (eds) Science and Technology of Mesoscopic Structures. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66922-7_39
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DOI: https://doi.org/10.1007/978-4-431-66922-7_39
Publisher Name: Springer, Tokyo
Print ISBN: 978-4-431-66924-1
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