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MOCVD Methods for Fabricating Semiconductor Nano-Structures

  • Takashi Fukui
  • Seigo Ando
  • Hisao Saito
Conference paper

Summary

Methods of fabricating quantum well wires and dots by metalorganic chemical vapor deposition (MOCVD) are reviewed. There are two methods of fabricating very narrow as-grown quantum wires and dots by crystal growth. One, using crystallographic facets grown by selective area MOCVD, produces facet quantum wires and quantum dots. The other using fractional-layer superlattices on GaAs vicinal surfaces, grows quantum wire arrays. The advantage of these quantum well wire and dot fabrication methods is that wire and dot widths as narrow as 10 nanometers can be obtained without any processing damage.

Keywords

Quantum Wire Wire Array Metalorganic Chemical Vapor Deposition Vicinal Surface Crystallographic Facet 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Takashi Fukui
    • 1
  • Seigo Ando
  • Hisao Saito
    • 2
  1. 1.Research Center for Interface Quantum ElectronicsHokkaido UniversitySapporo, 060Japan
  2. 2.NTT Basic Research LaboratoriesMusashino Tokyo, 180Japan

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