Summary
Methods of fabricating quantum well wires and dots by metalorganic chemical vapor deposition (MOCVD) are reviewed. There are two methods of fabricating very narrow as-grown quantum wires and dots by crystal growth. One, using crystallographic facets grown by selective area MOCVD, produces facet quantum wires and quantum dots. The other using fractional-layer superlattices on GaAs vicinal surfaces, grows quantum wire arrays. The advantage of these quantum well wire and dot fabrication methods is that wire and dot widths as narrow as 10 nanometers can be obtained without any processing damage.
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© 1992 Springer Japan
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Fukui, T., Ando, S., Saito, H. (1992). MOCVD Methods for Fabricating Semiconductor Nano-Structures. In: Namba, S., Hamaguchi, C., Ando, T. (eds) Science and Technology of Mesoscopic Structures. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66922-7_37
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DOI: https://doi.org/10.1007/978-4-431-66922-7_37
Publisher Name: Springer, Tokyo
Print ISBN: 978-4-431-66924-1
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