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Nanostructure Technology Developed Through Electron-Beam-Induced Surface Reaction

  • Shinji Matsui
  • Toshinori Ichihashi
  • Yukinori Ochiai
  • Masakazu Baba
  • Heiji Watanabe
  • Akinobu Sato
Conference paper

Summary

Nanostructure technology has been studied by using electron beam-induced surface reactions. Ten-nm linewidth polymethylmethacrylate (PMMA) resist patterns and 14-nm diameter carbon dot patterns have been demonstrated by 50 kV electron beam with a gas introduction line. It has been confirmed that damage induced by electron beam assisted dry etching is less than that induced by reactive ion beam etching. Atomic layer etching for GaAs has been achieved by scanning tunneling microscope (STM) assisted etching using a C12 adlayer. A side-wall roughness of GaAs patterns etched by reactive ion beam etching has been successfully measured by using a new STM tip made by electron beam deposition.

Keywords

Scanning Tunneling Microscope Sidewall Roughness Sidewall Surface Nanostructure Technology Variable Leak Valve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Shinji Matsui
    • 1
  • Toshinori Ichihashi
    • 1
  • Yukinori Ochiai
    • 1
  • Masakazu Baba
    • 1
  • Heiji Watanabe
    • 1
  • Akinobu Sato
    • 1
  1. 1.NEC CorporationTsukuba, Ibaraki, 305Japan

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