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Science and Technology of Mesoscopic Structures pp 292–296Cite as

Observation of Rotating Angle Dependence of Tunneling Spectra in Heavily Doped n-Type Silicon

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Summary

We observed the rotating angle dependence of tunneling spectra in n-type Si, which behavior reflects the anisotropic nature of the Fermi surface of Si. This behavior confirms the conservation of the transverse component of the electron wave vector in tunneling.

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References

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Author information

Author notes

  1. Takayuki Ezaki

    Present address: Sony Corporation, 4-14-1 Asahi-cho, Atsugi, 243, Japan

Authors and Affiliations

  1. Department of Electrical Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo, 169, Japan

    Hajime Ozaki

Authors
  1. Kazumi Shiikuma
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  2. Takayuki Ezaki
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  3. Hiroyuki Enomoto
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  4. Hajime Ozaki
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Editor information

Editors and Affiliations

  1. 536 Aba-machi, 851-01, Nagasaki, Japan

    Susumu Namba (Professor Emeritus of Osaka University, Professor of Nagasaki Institute of Applied Science) (Professor Emeritus of Osaka University, Professor of Nagasaki Institute of Applied Science)

  2. Department of Electronic Engineering, Osaka University, Yamadaoka 2-1, Suita City, Osaka, 565, Japan

    Chihiro Hamaguchi (Professor) (Professor)

  3. Institute for Solid State Physics, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo, 106, Japan

    Tsuneya Ando (Professor) (Professor)

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© 1992 Springer Japan

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Cite this paper

Shiikuma, K., Ezaki, T., Enomoto, H., Ozaki, H. (1992). Observation of Rotating Angle Dependence of Tunneling Spectra in Heavily Doped n-Type Silicon. In: Namba, S., Hamaguchi, C., Ando, T. (eds) Science and Technology of Mesoscopic Structures. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66922-7_30

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  • DOI: https://doi.org/10.1007/978-4-431-66922-7_30

  • Publisher Name: Springer, Tokyo

  • Print ISBN: 978-4-431-66924-1

  • Online ISBN: 978-4-431-66922-7

  • eBook Packages: Springer Book Archive

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