Observation of Rotating Angle Dependence of Tunneling Spectra in Heavily Doped n-Type Silicon

  • Kazumi Shiikuma
  • Takayuki Ezaki
  • Hiroyuki Enomoto
  • Hajime Ozaki


We observed the rotating angle dependence of tunneling spectra in n-type Si, which behavior reflects the anisotropic nature of the Fermi surface of Si. This behavior confirms the conservation of the transverse component of the electron wave vector in tunneling.


Bias Voltage Fermi Surface Versus Characteristic Transverse Component Tunnel Junction 
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Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Kazumi Shiikuma
  • Takayuki Ezaki
    • 1
  • Hiroyuki Enomoto
  • Hajime Ozaki
    • 2
  1. 1.Sony CorporationAtsugi, 243Japan
  2. 2.Department of Electrical EngineeringWaseda UniversityTokyo, 169Japan

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