Observation of the Charging Effect in I–V Characteristics Through a Quantum Dot Fabricated by a Focused Ion Beam at 4.2K

  • Shunji Nakata
Conference paper


Small tunnel barriers were formed on A1GaAs/GaAs fabricated by Focused-Ion-Beam (FIB) implantation. These samples were measured using DC current at 4.2K. The current-voltage (I–V) curve had two distinct regions: a tunneling regime and a region which resulted from a thermal current over the barrier height. In the source-drain voltage (Vsd) range from — 5 mV to 5 mV, a dip in the dI/dV curve was observed in the tunneling region. In a different sample, periodic and reproducible staircase steps with periodicity Vsd = 35 mV were observed in the tunneling region at 4.2K. This Coulomb staircase phenomenon occurs when the number of electrons in a quantum dot is changed.


Potential Profile Thermal Current Coulomb Blockade Single Electron Tunneling Tunneling Region 
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  1. 1.
    Heinrich H, Bauer G, Kuchar F (eds) (1988) Physics and technology of submicron structures, vol 83. Springer, Berlin (Series in Solid State Sciences)Google Scholar
  2. 2.
    Nakata S, Yamada S, Hirayama Y, Saku T, Horikoshi Y (1990) Jpn J Appl Phys 29: 32Google Scholar
  3. 3.
    Hirayama Y, Saku T (1990) Phys Rev B41: 2927ADSCrossRefGoogle Scholar
  4. 4.
    Nakata S, Hirayama Y, Tarucha S, Horikoshi Y (1991) J Appl Phys 69: 3633ADSCrossRefGoogle Scholar
  5. 5.
    Tarucha S, Hirayama Y, Saku T, Kimura T (1990) Phys Rev B41: 5459ADSCrossRefGoogle Scholar
  6. 6.
    Fulton TA, Dolan GJ (1987) Phys Rev Lett 59: 109ADSCrossRefGoogle Scholar
  7. 7.
    Kuzmin LS, Delsing P, Claeson T, Likharev KK (1989) Phys Rev Lett 62: 2539ADSCrossRefGoogle Scholar
  8. 8.
    Wilkins R, Ben-Jacob E, Jaklevic RC (1989) Phys Rev Lett 63: 801ADSCrossRefGoogle Scholar
  9. 9.
    Scott-Thomas JHF, Field B, Kastner MA, Smith HI, Antoniadis DA (1989) Phys Rev Lett 62: 583ADSCrossRefGoogle Scholar
  10. 10.
    Staring AAM, van Houten H, Beenakker CWJ, Foxon CT (1990) In: Landwehr G (ed) High magnetic fields in semiconductor physics 3. Springer, BerlinGoogle Scholar
  11. 11.
    Meirav U, Kastner MA, Wind SJ (1990) Phys Rev Lett 65: 771ADSCrossRefGoogle Scholar
  12. 12.
    Likharev KK (1988) IBM J Res Develop 32: 144CrossRefGoogle Scholar
  13. 13.
    Mullen K, Ben-Jacob E, Jaclevic RC, Schuss Z (1988) Phys Rev B37: 98ADSGoogle Scholar

Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Shunji Nakata
    • 1
  1. 1.NTT Basic Research LaboratoriesMusashino-shi, Tokyo, 180Japan

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