Observation of the Charging Effect in I–V Characteristics Through a Quantum Dot Fabricated by a Focused Ion Beam at 4.2K
Small tunnel barriers were formed on A1GaAs/GaAs fabricated by Focused-Ion-Beam (FIB) implantation. These samples were measured using DC current at 4.2K. The current-voltage (I–V) curve had two distinct regions: a tunneling regime and a region which resulted from a thermal current over the barrier height. In the source-drain voltage (Vsd) range from — 5 mV to 5 mV, a dip in the dI/dV curve was observed in the tunneling region. In a different sample, periodic and reproducible staircase steps with periodicity Vsd = 35 mV were observed in the tunneling region at 4.2K. This Coulomb staircase phenomenon occurs when the number of electrons in a quantum dot is changed.
KeywordsPotential Profile Thermal Current Coulomb Blockade Single Electron Tunneling Tunneling Region
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