One- and Zero-Dimensional Tunneling Diodes Fabricated by Focused Ion Beam Implantation

  • Seigo Tarucha
  • Yoshiro Hirayama
  • Tadashi Saku
  • Yasuhiro Tokura


One-dimensional and zero-dimensional tunneling diodes were fabricated using focused Ga ion beam implantation. The current vs voltage (I-V) curves of one-dimensional diodes showed broad steps near the onset of the tunneling current, followed by a series of small current peaks at higher voltages. The I–V curves of the zero-dimensional diodes, however, showed a series of peaks at the onset of the tunneling current. These differences are well reproduced by calculating the tunneling of a three-dimensional electron through the one-dimensional or zero-dimensional well levels. In the zero-dimensional diode, the amplitude difference between neighboring current peaks was constant because of the degeneracy of the zero-dimensional well levels confined by a harmonic lateral potential. One-dimensional diodes with strong lateral confinement in the contact region were fabricated by implanting a low dose of ions. This tunneling current is generated by the mixing of one-dimensional (emitter) and two-dimensional (well) subbands whose eigenfunctions have the same parity.


Contact Region Emitter Region Tunneling Current Resonant Tunneling Lateral Confinement 
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  1. 1.
    Reed MA, Randall JN, Aggarwal RJ, Matyi RJ, Moore TM, Wetsel AE (1989) Phys Rev Lett 60: 535 - 538ADSCrossRefGoogle Scholar
  2. 2.
    Reed MA, Randall JN, Aggarwal RJ, Matyi RJ, Moore TM, Wetsel AE (1989) Festkörperprobleme 29: 267 - 283Google Scholar
  3. 3.
    Tewordt M, Law VJ, Syme RT, Kelly MJ, Newbury R, Pepper M, Frost JEF, Ritchie DA, Jones AC (1990) Ed. Anastassakis EM and Joannopoulos JD World Scientific (Singapore) Proc 20th int conf on The Physics of Semiconductors: 2455-2458Google Scholar
  4. 4.
    Su Bo, Goldman VJ, Santos M, Shayegan M (1991) Appl Phys Lett 58: 747 - 749ADSCrossRefGoogle Scholar
  5. 5.
    Tarucha S, Hirayama Y, Saku T, Kimura T (1990) Phys Rev B41: 5459 - 5462ADSCrossRefGoogle Scholar
  6. 6.
    Tarucha S, Hirayama Y (1991) Phys Rev B43: 9397 - 9400Google Scholar
  7. 7.
    Tarucha S, Tokura Y, Hirayama Y (1991) Appl Phys Lett 58: 1623 - 1625ADSCrossRefGoogle Scholar
  8. 8.
    Bryant GW (1989) Phys Rev B39: 3145 - 3152ADSCrossRefGoogle Scholar
  9. 9.
    Bryant GW (1991) Phys Rev B44: 3782 - 3786ADSGoogle Scholar
  10. 10.
    Liu HC, Aers GC (1989) J Appl Phys 65: 4908 - 4914ADSCrossRefGoogle Scholar
  11. 11.
    Reed MA, Fresley WR, Ducan WM, Matyi RJ, Seabaugh AC, Tsai H-L (1989) Appl Phys Lett 54: 1256 - 1258ADSCrossRefGoogle Scholar

Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Seigo Tarucha
  • Yoshiro Hirayama
    • 1
  • Tadashi Saku
  • Yasuhiro Tokura
    • 2
  1. 1.Max-Planck-Institut für FestkörperforschungStuttgart 80Germany
  2. 2.NTT Basic Research LaboratoriesTokyo, 180Japan

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