Summary
Conductance fluctuations (CFs) in GaAs/AlGaAs and InGaAs/InAlAs quantum wires were investigated at temperatures ranging from 2 down to 0.06 K. The temperature dependence of the amplitude of CF <δg> did not increase monotonically with decreasing temperature. The temperature dependence of the InGaAs/InAlAs quantum wire followed a one-half reduction of <δg> which was theoretically predicted to appear in the strong spin-orbit scattering limit. We found that the observed temperature dependence correlated well with the transition from weak to strong spin-orbit scattering regimes at very low temperatures. This transition was not as clearly observed in the GaAs/A1GaAs wire as in the InGaAs/InAlAs wire, probably due to the weaker spin-orbit scattering effect.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Stone AD (1989) Phys Rev B39:10 736–10 743
Lee PA, Stone AD, Fukuyama H (1987) Phys Rev B35: 1039–1070
Debray P, Pichard JL, Vicente J, Tung PN (1989) Phys Rev Lett 63: 2264–2267
Kawaji S, Kuboki K, Shigeno H, Nambu T, Wakabayashi J, Yoshino J, Sasaki H (1985) In: Chad: JD, Harrison (eds) The WA 17th international conference on physics of semiconductors. pp 413
Elliott RJ (1954) Phys Rev 96: 266
Fukai YK, Yamada S, Nakano H (1990) Appl Phys Lett 56: 2123–2125
Fukai YK, Nakano H, Nakata S, Tarucha S, Arai K to be submitted
Feng S (1989) Phys Rev B39: 8722–8724
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1992 Springer Japan
About this paper
Cite this paper
Fukai, Y.K., Nakano, H., Nakata, S., Tarucha, S., Arai, K. (1992). Transition from Weak to Strong Spin-Orbit Scattering Effect on Conductance Fluctuation in InGaAs/InAlAs Quantum Wires. In: Namba, S., Hamaguchi, C., Ando, T. (eds) Science and Technology of Mesoscopic Structures. Springer, Tokyo. https://doi.org/10.1007/978-4-431-66922-7_21
Download citation
DOI: https://doi.org/10.1007/978-4-431-66922-7_21
Publisher Name: Springer, Tokyo
Print ISBN: 978-4-431-66924-1
Online ISBN: 978-4-431-66922-7
eBook Packages: Springer Book Archive