Transition from Weak to Strong Spin-Orbit Scattering Effect on Conductance Fluctuation in InGaAs/InAlAs Quantum Wires
Conductance fluctuations (CFs) in GaAs/AlGaAs and InGaAs/InAlAs quantum wires were investigated at temperatures ranging from 2 down to 0.06 K. The temperature dependence of the amplitude of CF <δg> did not increase monotonically with decreasing temperature. The temperature dependence of the InGaAs/InAlAs quantum wire followed a one-half reduction of <δg> which was theoretically predicted to appear in the strong spin-orbit scattering limit. We found that the observed temperature dependence correlated well with the transition from weak to strong spin-orbit scattering regimes at very low temperatures. This transition was not as clearly observed in the GaAs/A1GaAs wire as in the InGaAs/InAlAs wire, probably due to the weaker spin-orbit scattering effect.
KeywordsInelastic Scattering Quantum Wire Metal Organic Chemical Vapor Deposition Measured Temperature Range Thermal Diffusion Length
Unable to display preview. Download preview PDF.
- 1.Stone AD (1989) Phys Rev B39:10 736–10 743Google Scholar
- 4.Kawaji S, Kuboki K, Shigeno H, Nambu T, Wakabayashi J, Yoshino J, Sasaki H (1985) In: Chad: JD, Harrison (eds) The WA 17th international conference on physics of semiconductors. pp 413Google Scholar
- 7.Fukai YK, Nakano H, Nakata S, Tarucha S, Arai K to be submittedGoogle Scholar