Advertisement

Transition from Weak to Strong Spin-Orbit Scattering Effect on Conductance Fluctuation in InGaAs/InAlAs Quantum Wires

  • Yoshino K. Fukai
  • Hayato Nakano
  • Shunji Nakata
  • Seigo Tarucha
  • Kunihiro Arai
Conference paper

Summary

Conductance fluctuations (CFs) in GaAs/AlGaAs and InGaAs/InAlAs quantum wires were investigated at temperatures ranging from 2 down to 0.06 K. The temperature dependence of the amplitude of CF <δg> did not increase monotonically with decreasing temperature. The temperature dependence of the InGaAs/InAlAs quantum wire followed a one-half reduction of <δg> which was theoretically predicted to appear in the strong spin-orbit scattering limit. We found that the observed temperature dependence correlated well with the transition from weak to strong spin-orbit scattering regimes at very low temperatures. This transition was not as clearly observed in the GaAs/A1GaAs wire as in the InGaAs/InAlAs wire, probably due to the weaker spin-orbit scattering effect.

Keywords

Inelastic Scattering Quantum Wire Metal Organic Chemical Vapor Deposition Measured Temperature Range Thermal Diffusion Length 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Stone AD (1989) Phys Rev B39:10 736–10 743Google Scholar
  2. 2.
    Lee PA, Stone AD, Fukuyama H (1987) Phys Rev B35: 1039–1070ADSCrossRefGoogle Scholar
  3. 3.
    Debray P, Pichard JL, Vicente J, Tung PN (1989) Phys Rev Lett 63: 2264–2267ADSCrossRefGoogle Scholar
  4. 4.
    Kawaji S, Kuboki K, Shigeno H, Nambu T, Wakabayashi J, Yoshino J, Sasaki H (1985) In: Chad: JD, Harrison (eds) The WA 17th international conference on physics of semiconductors. pp 413Google Scholar
  5. 5.
    Elliott RJ (1954) Phys Rev 96: 266ADSMATHCrossRefGoogle Scholar
  6. 6.
    Fukai YK, Yamada S, Nakano H (1990) Appl Phys Lett 56: 2123–2125ADSCrossRefGoogle Scholar
  7. 7.
    Fukai YK, Nakano H, Nakata S, Tarucha S, Arai K to be submittedGoogle Scholar
  8. 8.
    Feng S (1989) Phys Rev B39: 8722–8724ADSCrossRefGoogle Scholar

Copyright information

© Springer Japan 1992

Authors and Affiliations

  • Yoshino K. Fukai
    • 1
  • Hayato Nakano
  • Shunji Nakata
  • Seigo Tarucha
    • 2
  • Kunihiro Arai
    • 1
  1. 1.NTT LSI LaboratoriesAtsugi, KanagawaJapan
  2. 2.NTT Basic Research LaboratoriesTokyo, 180Japan

Personalised recommendations