Advertisement

Microwave Surface Resistance of YBa2Cu3Oy Thin Films Prepared by Inductive Coupled Plasma Sputtering

  • T. Suzuki
  • S. Sato
  • M. Kusunoki
  • M. Mukaida
  • S. Ohshima

Abstract

The YBa2Cu3Oy (YBCO) film having low surface resistance (R s ) was prepared using an inductive coupled plasma sputtering technique. To increase the low deposition rate, a new self-template method was examined. The YBCO films fabricated on the 21-nm-thick template YBCO layer were c-axis oriented grain perfectly and successfully grew even at 3 times higher deposition rate. However, the R s was not low enough, due to the in-plane misaligned grains. Therefore, the BaSnO3 (BSO) buffer was used to obtain perfect in-plane aligned grains. The R s value of the YBCO/YBCO-template/BSO/MgO film was 0.38 mΩ at 35 K and 1.13 mΩ at 77 K in measurement frequency 22 GHz. The R s values scaled to 10 GHz were 0.08 mΩ at 35 K and 0.23 mΩ at 77 K, respectively.

Keywords

Deposition Rate Inductive Couple Plasma YBCO Film YBCO Thin Film Template Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    B. Utz, R. Semerad, M. Bauer, W. Prusseit, R. Berberich, and H. Kinder: IEEE Trans. Appl. Supercond.,7, 1272(1997).Google Scholar
  2. [2]
    G. Muller, B. Aschermann, H. Chaloupka, W. Diete, M. Getta, B. Gurzinski, M. Hein, M. Jeck, T. Kaiser, S. Kolesov, H. Piel, H. Schlick, and R. Theisejans: IEEE Trans. Appl. Supercond., 7, 1287 (1997).CrossRefGoogle Scholar
  3. [3]
    Y. Ueno, N. Sakakibara, M. Okazaki, M. Aoki: Advances in Superconductivity, X, 1131 (1997).Google Scholar
  4. [4]
    M. Lorenz, H. Hochmuth, D. Natusch, H. Borner, G. Lippold, K. Kreher, and W. Schmitz: Appl. Phys. Lett., 68, 3332 (1996).ADSCrossRefGoogle Scholar
  5. [5]
    Y. Setsuhara, H. Kamai, S. Miyake, J. Musil: Jpn. J. Appl. Phys., 36, 4568(1997).Google Scholar
  6. [6]
    Y. Hikosaka, M. Nakamura and H. Suzuki: Jpn. J. Appl. Phys., 33, 2157(1994).Google Scholar
  7. [7]
    H. Nogami, Y. Nakagawa, K. Mashimo, Y. Ogahara, T. Tsukada: Jpn. J. Appl. Phys., 35, 2477 (1996).ADSCrossRefGoogle Scholar
  8. [8]
    M. Kusunoki, Y. Takano, M. Mukaida and S. Ohshima: Physica C, 321 81 (1999).ADSCrossRefGoogle Scholar
  9. [9]
    M. Mukaida, Jpn. J. Appl. Phys. vol.38 (1999) pp926–928ADSCrossRefGoogle Scholar

Copyright information

© Springer Japan 2000

Authors and Affiliations

  • T. Suzuki
    • 1
  • S. Sato
    • 1
  • M. Kusunoki
    • 1
  • M. Mukaida
    • 1
  • S. Ohshima
    • 1
  1. 1.Department of Electrical and Information EngineeringYamagata UniversityYonezawaJapan

Personalised recommendations