Identification of Vortex Pinning Centers in Melt Textured ReBa2Cu3O7 (Re = Y,Nd)
Melt textured single domain ReBa2Cu3O7 (Re = Y,Nd) samples were post-processed, either under high oxygen pressure (PO2 ≤180 bar) or under cold isostatic pressing (CIP) conditions. We show that CIP processing can lead to critical current enhancements up to 100% at 77K. The analysis of the evolution of the microstructure by TEM allows us to attribute the enhanced pinning to 1/6 partial dislocations which are distributed anisotropically within the (001) plane. In Nd123/422 composites we demonstrate that high oxygen pressure annealing enhances interface pinning in parallel with a reduction of the fishtail anomaly due to the presence of Nd-Ba antisite defects.
KeywordsStack Fault Energy Critical Current Density Partial Dislocation Antisite Defect Cold Isostatic Pressure
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