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Non-volatile Memories

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Normally-Off Computing

Abstract

This chapter describes the basic properties of various computer memories. Historical evolution of the roles of non-volatile functionalities in computer architecture is discussed to explain recent rejuvenating interest in new non-volatile memory technologies. Next, required properties for memories, such as scalability, access speed, power consumption, are discussed referring to those of current main-stream memories, i.e., dynamic random access memory (DRAM), static RAM, and NAND flash memory. Then, histories, working principles, and properties of spin-transfer torque magnetoresistive RAM, resistive RAM, phase change RAM, ferroelectric RAM, and NOR flash memory are described. Finally, possible positioning of these various non-volatile memories in future computer architecture are discussed.

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Author information

Authors and Affiliations

  1. National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan

    Koji Ando

  2. Toshiba Corporation, Minato, Tokyo, Japan

    Shinobu Fujita

  3. Renesas Electronics Corporation, Koto, Tokyo, Japan

    Masanori Hayashikoshi

  4. ROHM Co., Ltd., Kyoto, Japan

    Yoshikazu Fujimori

Authors
  1. Koji Ando
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  2. Shinobu Fujita
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  3. Masanori Hayashikoshi
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  4. Yoshikazu Fujimori
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Corresponding author

Correspondence to Koji Ando .

Editor information

Editors and Affiliations

  1. The University of Tokyo, Tokyo, Japan

    Takashi Nakada

  2. The University of Tokyo, Tokyo, Japan

    Hiroshi Nakamura

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Ando, K., Fujita, S., Hayashikoshi, M., Fujimori, Y. (2017). Non-volatile Memories. In: Nakada, T., Nakamura, H. (eds) Normally-Off Computing. Springer, Tokyo. https://doi.org/10.1007/978-4-431-56505-5_3

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  • DOI: https://doi.org/10.1007/978-4-431-56505-5_3

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  • Publisher Name: Springer, Tokyo

  • Print ISBN: 978-4-431-56503-1

  • Online ISBN: 978-4-431-56505-5

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