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Fabrication of 3D Quantum Dot Array by Fusion of Biotemplate and Neutral Beam Etching II: Application to QD Solar Cells and Laser/LED

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Intelligent Nanosystems for Energy, Information and Biological Technologies

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Abstract

We investigated the controllable range of bandgap energy, E g and optical absorption characteristic of silicon quantum nanodisks (QNDs) formed by a top-down method described in previous chapter, which enables precise control of geometrical parameters. By embedding by Silicon Carbides, the wave function of the QNDs overlaps each other, and a wide miniband was formed, which enhance only the photon absorption but carrier transport in the stacked QNDs. The high optical absorption and conductivity properties were verified by fabricating p–i–n solar cells with Si-NDs, and efficient carrier generation and high electrical conductivity in our Si-ND structure were surely clarified. The top-down process was also applied to form quantum dots photonic devices based on III–V compound semiconductors. We fabricated GaAs nanodisks (NDs) with a diameter of sub-20 nm. The GaAs NDs were embedded with AlGaAs regrown by metal organic vapor phase epitaxy. Light emitting diodes were fabricated using the NDs, exhibiting a narrow spectral width of 38 nm with high-intensity as a result of small size deviation of NDs and superior quality of GaAs/AlGaAs surface formed by neutral beam etching.

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Authors and Affiliations

  1. Institute of Fluid Science, Tohoku University, Sendai, 980-8577, Japan

    Seiji Samukawa

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  1. Seiji Samukawa
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Correspondence to Seiji Samukawa .

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  1. Japan Science and Technology Agency, Tokyo, Japan

    Jun’ichi Sone

  2. Japan Science and Technology Agency, Tokyo, Japan

    Shinji Tsuji

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Samukawa, S. (2016). Fabrication of 3D Quantum Dot Array by Fusion of Biotemplate and Neutral Beam Etching II: Application to QD Solar Cells and Laser/LED. In: Sone, J., Tsuji, S. (eds) Intelligent Nanosystems for Energy, Information and Biological Technologies. Springer, Tokyo. https://doi.org/10.1007/978-4-431-56429-4_10

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