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Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors

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Frontiers of Graphene and Carbon Nanotubes

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Abstract

Stochastic resonance (SR) in carbon nanotube field-effect transistors (CNT-FETs) was investigated to enhance their weak-signal response. When weak pulse trains were applied to the gate of a CNT-FET operating in a subthreshold region, the correlation between the input and output voltages increased upon addition of noise with optimized intensity. Virtual CNT-FET summing networks of N units were demonstrated to improve SR. When no noise was applied for N  = 1, the correlation coefficient was nearly 0, while the correlation coefficient at the peak intensity for N  = 8 was estimated to be 0.58, indicating that significant enhancement of the correlation was observed in the summing network of the CNT-FETs. Then, a solution-gated CNT-FET based on SR was investigated. When noise of optimal intensity was introduced at the reference electrode in a nonlinear CNT-FET, the electric double layer in the solution was modulated, resulting in SR behavior. Moreover, when the CNT-FET was used as a pH sensor, high sensitivity was achieved, which enabled the detection of small differences in pH. The best results were obtained in a noisy environment; therefore, a solution-gated SR-based CNT-FET operated in the subthreshold regime is a promising high-sensitivity sensor.

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Authors and Affiliations

  1. Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka, 567-0047, Japan

    Yasuhide Ohno & Kazuhiko Matsumoto

  2. Tokyo University of Agriculture and Technology, Tokyo, Japan

    Kenzo Maehashi

Authors
  1. Yasuhide Ohno
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  2. Kenzo Maehashi
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  3. Kazuhiko Matsumoto
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Correspondence to Yasuhide Ohno .

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Editors and Affiliations

  1. Osaka University, Osaka, Japan

    Kazuhiko Matsumoto

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Ohno, Y., Maehashi, K., Matsumoto, K. (2015). Stochastic Resonance Effect on Carbon Nanotube Field-Effect Transistors. In: Matsumoto, K. (eds) Frontiers of Graphene and Carbon Nanotubes. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55372-4_12

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  • DOI: https://doi.org/10.1007/978-4-431-55372-4_12

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