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Electronic Processes in Organic Electronics pp 89–107Cite as

Vertical Bonding Distances Impact Organic-Metal Interface Energetics

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Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 209))

Abstract

The X-ray standing wave (XSW) technique is ideally suited to measure element-specific bonding distances of organic (sub)monolayers on metal single crystalline surfaces. These bonding distances are crucial for the energy-level alignment and thus for the charge injection properties at these interfaces. We review experimentally determined bonding distances of several prototypical interfaces. Even for weakly interacting systems site-specific interactions can lead to adsorption induced molecular distortions and consequently to additional intramolecular dipoles, which impact the energy-level alignment. Guidelines to tune adsorption heights by rational molecular design are discussed. For strongly interacting system (charge transfer complex formation) distortions of the molecules on the substrate play a pivotal role in the process of surface-induced aromatic stabilization, which results in metallic organic monolayers.

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Notes

  1. 1.

    In the literature usually this decrease in ϕ by the push-back effect is attributed to an interface dipole, although strictly speaking an existing interface dipole (at the vacuum-metal interface) is reduced by the organic-metal interface formation.

  2. 2.

    Note, that for a centrosymmetric crystal, \( {\chi}_H={\chi}_H^{\ast } \) and therefore \( {\left({\chi}_H{\chi}_{\overline{H}}\right)}^{1/ 2}=\left|{\chi}_H\right| \).

  3. 3.

    Depending on the experimental setup, i.e. particularly the emission angle, non-dipole corrections [15] have to be included.

  4. 4.

    “Conventional UPS” is used here in contrast to “ultrahigh-sensitivity UPS” [8, 49], which can also detect tiny density of states which are below the detection limit of most current UPS set-ups.

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Acknowledgements

All measurements of bonding distances discussed in this chapter have been performed at beamline ID32 [60] at the European Synchrotron Radiation Facility (ESRF) in Grenoble (France). Analysis of experimental data was done using the software package dare (developed at the ESRF). The beamtimes have been supported in an outstanding way by the staff of ID32, namely T.-L. Lee, Y.Y. Mi, J. Roy, P. Rajput, J. Duvernay, B. Detlefs and J. Zegenhagen. We thank J. Niederhausen S. Kera, N. Ueno, G. Heimel, I. Salzmann, N. Koch, H. Yamane, E. Zojer and F. Schreiber for many fruitful discussions and most of them also for help during the beamtimes. The work which resulted in the publications [20, 27–32] has been supported by the G-COE of Chiba University. In addition, TH and SD gratefully acknowledge financial support by scholarships from the Alexander von Humboldt-Foundation and the Japan Society for the Promotion of Science, respectively. SD is also affiliated with the Soochow University-Western University Centre for Synchrotron Radiation Research.

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Authors and Affiliations

  1. Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou, 215123, P. R. China

    Steffen Duhm

  2. Research Institute of Instrumentation Frontier (RIIF), National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Tsukuba, Ibaraki, 305-8568, Japan

    Takuya Hosokai

  3. Institut für Angewandte Physik, Universität Tübingen, Auf der Morgenstelle 10, 72076, Tübingen, Germany

    Christoph Bürker & Alexander Gerlach

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  1. Steffen Duhm
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  2. Christoph Bürker
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  3. Takuya Hosokai
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  4. Alexander Gerlach
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Correspondence to Steffen Duhm or Alexander Gerlach .

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Editors and Affiliations

  1. Chiba University, Chiba, Japan

    Hisao Ishii

  2. Chiba University, Chiba, Japan

    Kazuhiro Kudo

  3. Chiba University, Chiba, Japan

    Takashi Nakayama

  4. Chiba University, Chiba, Japan

    Nobuo Ueno

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Duhm, S., Bürker, C., Hosokai, T., Gerlach, A. (2015). Vertical Bonding Distances Impact Organic-Metal Interface Energetics. In: Ishii, H., Kudo, K., Nakayama, T., Ueno, N. (eds) Electronic Processes in Organic Electronics. Springer Series in Materials Science, vol 209. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55206-2_6

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