Abstract
We developed ultrahigh sensitivity UPS with very low background, which does not introduce detectable radiation damages into organic materials. The UPS detects density of states of the order of ~1016 states eV−1 cm−3 even for radiation-sensitive organic films, which is comparable to electrical measurements of charge trapping centers. In this chapter we introduce the method of ultrahigh sensitivity measurement and some results on the energy distribution of gap states in pentacene films. Striking effects on the gap states and the energy level alignment due to (i) gas exposure (one atmosphere N2, O2 and Ar) and (ii) hole doping are discussed.
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Acknowledgements
The authors are very grateful to Dr. M. Ono of Kaiyo Academy for his contribution to constructing the prototype apparatus. They also deeply thank Prof. K. Kudo and Prof. H. Ishii of Chiba University, Prof. M. Nakamura of Nara Institute of Science and Technology, Prof. A. Kahn of Princeton University, Prof. D. Cahen of Weizmann Institute of Science, Prof. N. Koch of Humboldt University, and Prof. A. T. S. Wee and Prof. W. Chen of National University of Singapore for their discussion on origins of the energy level alignment and gap states.
NU is very grateful to the late Prof. K. Seki of Nagoya University for discussion on the organic interface.
The ultrahigh sensitivity UPS project is supported by 21st Century COE program (MEXT) and Global COE program (MEXT).
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Ueno, N., Sueyoshi, T., Bussolotti, F., Kera, S. (2015). Ultraviolet Photoelectron Spectroscopy (UPS) III: Direct Study of “Invisible” Band Gap States by Ultrahigh-Sensitivity UPS. In: Ishii, H., Kudo, K., Nakayama, T., Ueno, N. (eds) Electronic Processes in Organic Electronics. Springer Series in Materials Science, vol 209. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55206-2_4
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