Abstract
For the prediction of abnormal etching profiles, an ion trajectory prediction system has recently been developed. In this system, sheath modeling was combined with the on-wafer monitoring technique for accurate prediction. This system revealed that sidewall conductivity strongly affects the charge accumulation and ion trajectory in high-aspect-ratio holes. It was also found that the accumulated charge in adjacent holes is one of the reasons for the generation of twisting profiles according to analysis using the system. We presume that the prediction system is an effective tool for developing nanoscale fabrication.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
A.A. Ayon, S. Nagle, L. Frechette, A. Epstein, M.A. Schmidt, J. Vac. Sci. Technol. B 18, 1412 (2000)
J. Saussac, J. Margot, M. Chaker, J. Vac. Sci. Technol. A 27, 130 (2009)
K. Hashimoto, Jpn. J. Appl. Phys. 32, 6109 (1993)
A. Sankaran, M.J. Kushner, J. Vac. Sci. Technol. A 22, 1242 (2004)
F. Hamaoka, T. Yagisawa, T. Makabe, J. Phys. D 42, 075201 (2009)
Y. Osano, M. Mori, N. Itabashi, K. Takahashi, K. Eriguchi, K. Ono, Jpn. J. Appl. Phys. 45, 8157 (2006)
Y. Osano, K. Ono, J. Vac. Sci. Technol. B 26, 1425 (2008)
T.G. Madziwa-Nussinov, D. Arnush, F.F. Chen, IEEE Trans. Plasma Sci. 35, 1388 (2007)
J. Matsui, K. Maeshige, T. Makabe, J. Phys. D 34, 2950 (2001)
J. Matsui, N. Nakano, Z.L. Petrovic, T. Makabe, Appl. Phys. Lett. 78, 883 (2001)
K. Nishikawa, H. Ootera, S. Tomohisa, T. Oomori, Thin Solid Films 374, 190 (2000)
G.S. Hwang, K.P. Giapis, Appl. Phys. Lett. 71, 458 (1997)
H. Ohtake, B. Jinnai, Y. Suzuki, S. Soda, T. Shimmura, S. Samukawa, J. Vac. Sci. Technol. B 25, 400 (2007)
T. Shimmura, Y. Suzuki, S. Soda, S. Samukawa, M. Koyanagi, K. Hane, J. Vac. Sci. Technol. A 22, 433 (2004)
B. Jinnai, T. Orita, M. Konishi, J. Hashimoto, Y. Ichihashi, A. Nishitani, S. Kadomura, H. Ohtake, S. Samukawa, J. Vac. Sci. Technol. B 25, 1808 (2007)
T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane, J. Vac. Sci. Technol. B 20, 2346 (2002)
T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane, J. Vac. Sci. Technol. B 22, 533 (2004)
H. Ohtake, S. Fukuda, B. Jinnai, T. Tatsumi, S. Samukawa, Jpn. J. Appl. Phys. 49, 04DB14 98 (2010)
M.A. Vyvoda, M. Li, D.B. Graves, H. Lee, M.V. Malyshev, F.P. Klemens, J.T.C. Lee, V.M. Donnelly, J. Vac. Sci. Technol. B 18, 820 (2000)
S.C. Park, S. Lim, C.H. Shin, G.J. Min, C.J. Kang, H.K. Cho, J.T. Moon, Dry Process Int. Symp. 2005, 5 (2005)
S.K. Lee, M.S. Lee, K.S. Shin, Y.C. Kim, J.H. Sun, T.W. Jung, D.D. Lee, G.S. Lee, S.C. Moon, J.W. Kim, Dry Process Int. Symp. 2005, 3 (2005)
H. Mochiki, K. Yatsuda, S. Okamoto, F. Inoue, AVS 56th international symposium, PS2-MN-WeA-4, 2009
Acknowledgments
We would like to thank Messrs. I. Kurachi, J. Hashimoto, and S. Kawada for preparing the on-wafer sensors and for the helpful discussions they had with us. We also wish to thank Mr. T. Ozaki for his assistance with the experiments.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2014 The Author(s)
About this chapter
Cite this chapter
Samukawa, S. (2014). Prediction of Abnormal Etching Profiles in High-Aspect-Ratio Via/Hole Etching Using On-wafer Monitoring System. In: Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System. SpringerBriefs in Applied Sciences and Technology. Springer, Tokyo. https://doi.org/10.1007/978-4-431-54795-2_3
Download citation
DOI: https://doi.org/10.1007/978-4-431-54795-2_3
Published:
Publisher Name: Springer, Tokyo
Print ISBN: 978-4-431-54794-5
Online ISBN: 978-4-431-54795-2
eBook Packages: EngineeringEngineering (R0)