The Effects of Doping Bismuth on the Thermoelectric Properties of Zn₄Sb₃

Abstract

Thermoelectric devices have gained importance in recent years as variable solutions for application such as spot cooling of electronic components, remote power generation in space stations and satellites, etc. Research in recent years in thermoelectricity has been focused in developing both thermoelectric structures and materials that have high efficiency. In my experiments, I would like to focus on developing new materials and enhance thermoelectric performances; thermoelectric properties of bismuth-doped compounds Zn₄(Sb_{3 − x} Bi _x ) (x = 0.1, 0.2, 0.3, 0.4, 0.5) have been studied at temperatures from 323 to 573 K. In this study, the Zn₄Sb₃ element showed high generation efficiency at a temperature domain of 323–573 K of the exhaust gas which appeared at the time of iron manufacture with the standard element of the study in a semiconductor used for thermoelectric power generation. In these experiments, it is a trial in a performance gained by replacing Sb with Bi. In this paper, we present a review of the theoretical models that were developed since thermoelectricity was first observed in 1821 by Seebeck and how these models have guided experiment’s material search for improved thermoelectric devices.