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The STORM Technology CAD System

  • J. Lorenz
  • C. Hill
  • H. Jaouen
  • C. Lombardi
  • C. Lyden
  • K. De Meyer
  • J. Pelka
  • A. Poncet
  • M. Rudan
  • S. Solmi

Abstract

In this paper an outline of the STORM TCAD system is given. STORM is a program system for the two-dimensional simulation of semiconductor fabrication process sequences and the optimization of the electrical behavior of the devices fabricated. It has been developed within an ESPRIT project by a consortium of European companies and research institutes. In this presentation, the software structure of STORM is described, followed by a discussion of the physical models developed. Finally, some application examples are given. A more detailed description of the industrial evaluation of STORM is given in a dedicated paper elsewhere [1].

Keywords

Lateral Spread Dopant Profile Sticking Coefficient Process Field Dopant Distribution 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1993

Authors and Affiliations

  • J. Lorenz
    • 1
  • C. Hill
    • 1
    • 2
  • H. Jaouen
    • 1
    • 3
  • C. Lombardi
    • 1
    • 4
  • C. Lyden
    • 1
    • 5
  • K. De Meyer
    • 1
    • 6
  • J. Pelka
    • 1
    • 7
  • A. Poncet
    • 1
    • 8
  • M. Rudan
    • 1
    • 9
  • S. Solmi
    • 1
    • 10
  1. 1.BauelementetechnologieFraunhofer-Institut für Integrierte SchaltungenErlangenGermany
  2. 2.GEC Marconi Material TechnologyCaswellUK
  3. 3.SGS ThomsonGrenobleFrance
  4. 4.SGS ThomsonAgrate BrianzaItaly
  5. 5.NMRCCorkIreland
  6. 6.IMECLeuvenBelgium
  7. 7.FhG-ISiTBerlinGermany
  8. 8.CNETMeylanFrance
  9. 9.DEISUniversity of BolognaBolognaItaly
  10. 10.CNR-LAMELBolognaItaly

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