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MOSFET Models for VLSI Circuit Simulation pp 402–500Cite as

Data Acquisition and Model Parameter Measurements

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Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

Abstract

The accuracy of the device model predictions of the device characteristics are fully dependent on the model parameter values being used. Most of the circuit models discussed in the previous chapters are semi-empirical analytical models. These models always contain some fitting parameters that do not have physically well defined values, and very often physical values of model parameters do not always give the best fit to the actual device characteristics. For this reason, device model parameters are determined from the device data obtained from electrical measurement on different length and width devices and under different bias conditions. Collecting measured data and processing these data to accurately determine model parameter values is an essential task for the complete characterization of a transistor model for use in the circuit simulator.

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    Dr. Narain Arora

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Arora, N. (1993). Data Acquisition and Model Parameter Measurements. In: MOSFET Models for VLSI Circuit Simulation. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9247-4_9

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