MOSFET Models for VLSI Circuit Simulation pp 69-120 | Cite as

# MOS Transistor Structure and Operation

## Abstract

In this chapter we will give an overview of the MOS transistor as used in VLSI technology, and its behavior under operating biases will be explained qualitatively. First we will describe the basic MOSFET structure and then qualitatively discuss its current-voltage characteristics. During the last two decades, device lengths have been reduced from 20 *μ*m to less than a micron, which has resulted in high fields in the device. The rules of device scaling are first discussed followed by the impact of high field effects on device characteristics. Although there are various high field effects, the one which is of most concern for VLSI design is the so called hot-carrier effects. Only an overview is covered in this chapter, the detailed hot-carrier modeling is the subject of discussion in Chapter 8. Finally, a brief description of device structures specifically for VLSI design, that is important from a device modeling point of view, will be covered.

## Keywords

Gate Voltage Gate Oxide Junction Depth Drain Region Polysilicon Gate## Preview

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