Carrier Transport in an Inversion Channel
In the previous two chapters, we directed our attention to basic questions of carrier transport in bulk material. We derived the Boltzmann equation in Chapter 1 and in Chapter 2 studied its consequences for low- and high-field transport in an electron-impurity-phonon system. We did not consider the influence of a finite domain containing interfaces on the transport properties. Interfaces are essential in device operation. Every contact is related to an interface problem. Neither ohmic nor Schottky contacts have hitherto been described self-consistently within the framework of the drift-diffusion approximation. Modeling efforts are based on heuristic arguments and more or less do the job. We will not go into the details of how to formulate a suitable theory for current-carrying contacts. In Chapter 1, we mentioned that a self-consistent incorporation of tunneling in the transport problem is the key feature of such a theory and that Eqs. (1.151) or (1.163) are a possible starting point. Tunneling is a quantum-mechanical phenomenon and is therefore not included in the drift-diffusion approximation.
KeywordsClassical Limit Carrier Transport Vertex Function Channel Mobility Inversion Channel
Unable to display preview. Download preview PDF.
- Kadanoff L. P., Baym G. (1962): Quantum Statistical Mechanics. Benjamin, London.Google Scholar
- Laux S. E, Warren A. C. (1986): IEDM 86 Technical Digest 567.Google Scholar
- Mahan G. D. (1981): Many-Particle Physics. Plenum, New York.Google Scholar
- Selberherr S., Hänsch W., Seayey M., Slotboom J. W. (1990): Solid State Electr., to be published.Google Scholar
- Stern F. (1972): Phys. Rev. 35, 4891.Google Scholar
- Sze S. M. (1981): Physics of Semiconductor Devices ( 2nd Edition ). John Wiley, New York.Google Scholar
- Takagi S., Iwase ML, Toriumi A. (1988): IEDM 88 Technical Digest 398.Google Scholar
- Walker A. J., Woerlee P. H. (1988): J. Phys. Colloque C4, 265.Google Scholar