Abstract
The degree of complexity of today’s devices makes numerical methods for evaluating their electrical behavior mandatory. The special demands of modeling therefore require a simple formulation of carrier transport containing the essential physics in a way expressible in numerical code. It is often impossible to derive special physical features from first principles, because in the complete system these must be combined with a number of different effects in a nontrivial setting. Figure 1 shows a selected number of physical phenomena that must be included in any realistic simulation of a MOSFET device.
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Hänsch, W. (1991). Boltzmann’s Equation. In: The Drift Diffusion Equation and Its Applications in MOSFET Modeling. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9095-1_1
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