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Abstract

The degree of complexity of today’s devices makes numerical methods for evaluating their electrical behavior mandatory. The special demands of modeling therefore require a simple formulation of carrier transport containing the essential physics in a way expressible in numerical code. It is often impossible to derive special physical features from first principles, because in the complete system these must be combined with a number of different effects in a nontrivial setting. Figure 1 shows a selected number of physical phenomena that must be included in any realistic simulation of a MOSFET device.

Keywords

Boltzmann Equation Spectral Function Wigner Function Dyson Equation Thermodynamic Perturbation Theory 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1991

Authors and Affiliations

  • Wilfried Hänsch
    • 1
  1. 1.CharlotteUSA

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