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Models for the Enhancement-Type MOSFET

  • Henk C. de Graaff
  • François M. Klaassen
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

From the viewpoint of application, the enhancement-type transistor, which operates in the off-state mode at zero gate bias, is the most important MOSFET. Usually devices of this class are made on a uniform doped substrate or on a substrate with an implanted channel region. Examples are n-channel transistors with or without a p-type implanted layer in a p-type substrate and p-channel transistors with or without a shallow p-type implanted layer in an n-type substrate. Generally the models concerned have followed the path of progress in processing technology, from devices with structural dimensions longer than 10 µm to present-day devices with possibly submicron dimensions. Therefore we shall first discuss models for long-channel devices. This will be followed by a discussion of models for short-channel devices, in which a number of corresponding effects, like threshold voltage lowering etc., are taken into account. Since MOSFETs are also employed nowadays in analog circuitry, we finally discuss modelling for this more demanding application.

Keywords

Threshold Voltage Drain Current Saturation Voltage Depletion Charge Channel Length Modulation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1990

Authors and Affiliations

  • Henk C. de Graaff
    • 1
  • François M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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