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MOSFET Physics Relevant to Device Modelling

  • Henk C. de Graaff
  • François M. Klaassen
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

In order to facilitate the discussion of specific transistor models, which is the subject of the next three chapters, in this chapter we introduce some general device concepts relevant to MOSFET modelling. We deal successively with the following subjects: formation of an inversion layer, the ideal drain current, threshold voltage, carrier mobility in an inversion layer, the saturation mode, dynamic operation and inherent parasitics. Unless stated otherwise, the device structure considered here is that of an n-channel transistor. In most cases, a p-channel device only needs a change of sign to produce its model formulas.

Keywords

Threshold Voltage Depletion Layer Inversion Layer Gate Bias Device Modelling 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1990

Authors and Affiliations

  • Henk C. de Graaff
    • 1
  • François M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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