Advertisement

Lateral pnp Transistor Models

  • Henk C. de Graaff
  • François M. Klaassen
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

The use of lateral pnp transistors is widespread in linear integrated circuits. They are applied as active load devices, current sources, level shifters etc. [5.1]. Furthermore they are an integral part of integrated injection logic (I 2 L) circuits [5.2].

Keywords

Series Resistance Charge Storage Base Resistance Current Gain Model Definition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [5.1]
    H. C. Lin: D. C. Analysis of Multiple Collector and Emitter Transistors in Integrated Structures. IEEE J. Solid-St. Circ. SC-4, 20 (1969).CrossRefGoogle Scholar
  2. [5.2]
    K. Hart, A. Slob: Integrated Injection Logic: A New Approach to LSI. IEEE J. Solid-St. Circ. SC-7, 346 (1972).CrossRefGoogle Scholar
  3. [5.3]
    J. Sugawara, T. Kamei: A High Performance, High Voltage Self-Aligned Double- Diffused Lateral (SADDL) pnp Transistor. IEEE Trans. Electr. Dev. ED-33, 23 (1986).CrossRefGoogle Scholar
  4. [5.4]
    K. Nakazato, T. Nakamura, M. Kato: A 3 GHz Lateral pnp Transistor. lEDM Techn. Digest (paper 16. 3 ) 416 (1986).Google Scholar
  5. [5.5]
    J. Lindmayer, W. Schneider: Theory of Lateral Transistors. Solid-St. Electr. 10, 225 (1967).CrossRefGoogle Scholar
  6. [5.6]
    S. Chou: An Investigation of Lateral Transistors—d.c. Characteristics. Solid-St. Electr. 14, 811 (1971).CrossRefGoogle Scholar
  7. [5.7]
    S. Chou: Small-Signal Characteristics of Lateral Transistors. Solid-St. Electr. 15, 27 (1972).CrossRefGoogle Scholar
  8. [5.8]
    D. Seltz, J. Kidron: A Two-Dimensional Model for the Lateral p-n-p Transistor. IEEE Trans. Electr. Dev. ED-21, 587 (1974).CrossRefGoogle Scholar
  9. [5.9]
    H. H. Berger, U. Dreckmann: The Lateral p-n-p Transistor—A Practical Investigation of the d.c. Characteristics. IEEE Trans. Electr. Dev. ED-26, 1038 (1979).CrossRefGoogle Scholar
  10. [5.10]
    K-S. Seo, Ch-K. Kim: On the Geometrical Factor of Lateral p-n-p Transistors. IEEE Trans. Electr. Dev. ED-27, 295 (1980).CrossRefGoogle Scholar
  11. [5.11]
    A. A. Eltoukhy, D. J. Roulston: A Complete Analytic Model for the Base and Collector Current in Lateral p-n-p Transistors. Solid-St. Electr. 27, 69 (1984).CrossRefGoogle Scholar
  12. [5.12]
    I. Kidron: Integrated Circuit Model for Lateral pnp Transistors Including Isolation Junction Interactions. Int. J. Electr. 31, 421 (1971).CrossRefGoogle Scholar
  13. [5.13]
    M. C. Schneider, J. A. Bodinaud: A New Formulation of the Early Effect in Lateral pnp Transistors. Physica 129 B, 327 (1985).CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1990

Authors and Affiliations

  • Henk C. de Graaff
    • 1
  • François M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

Personalised recommendations