Compact Models for Vertical Bipolar Transistors

  • Henk C. de Graaff
  • François M. Klaassen
Part of the Computational Microelectronics book series (COMPUTATIONAL)


In chapter 3 we discussed the most relevant phenomena of bipolar device physics. In this chapter we will give a precise description of the model equations which together define a given model. This description will be limited to vertical npn transistors for integrated circuits, including the substrate effects of the parasitic pnp transistor. Vertical pnp transistors also exist, but they require no new fundamental additions.


Bipolar Transistor Compact Model Current Crowding Base Charge Depletion Charge 
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Copyright information

© Springer-Verlag/Wien 1990

Authors and Affiliations

  • Henk C. de Graaff
    • 1
  • François M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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