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Modelling of Bipolar Device Phenomena

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Compact Transistor Modelling for Circuit Design

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

In this chapter we will first discuss some general problems in bipolar device modelling, namely the choice between injection and transport models and the validity of the charge control principle. After that we will show how the various device phenomena like main currents, Early effect, depletion capacitance etc., can be described by means of compact, explicit and analytical mathematical expressions. Unless stated otherwise, the device structure considered here is that of a vertical npn transistor. In most cases the vertical pnp transistor only needs a change of sign in its model formulas. The lateral pnp transistor, which is quite different, will be treated in a separate chapter.

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Authors and Affiliations

  1. Philips Research Laboratories, Eindhoven, The Netherlands

    Dr. Henk C. de Graaff & Dr. François M. Klaassen

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  1. Dr. Henk C. de Graaff
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  2. Dr. François M. Klaassen
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© 1990 Springer-Verlag/Wien

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de Graaff, H.C., Klaassen, F.M. (1990). Modelling of Bipolar Device Phenomena. In: Compact Transistor Modelling for Circuit Design. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9043-2_3

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  • DOI: https://doi.org/10.1007/978-3-7091-9043-2_3

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-9045-6

  • Online ISBN: 978-3-7091-9043-2

  • eBook Packages: Springer Book Archive

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