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Modelling of Bipolar Device Phenomena

  • Henk C. de Graaff
  • François M. Klaassen
Part of the Computational Microelectronics book series (COMPUTATIONAL)

Abstract

In this chapter we will first discuss some general problems in bipolar device modelling, namely the choice between injection and transport models and the validity of the charge control principle. After that we will show how the various device phenomena like main currents, Early effect, depletion capacitance etc., can be described by means of compact, explicit and analytical mathematical expressions. Unless stated otherwise, the device structure considered here is that of a vertical npn transistor. In most cases the vertical pnp transistor only needs a change of sign in its model formulas. The lateral pnp transistor, which is quite different, will be treated in a separate chapter.

Keywords

Collector Current High Injection Bipolar Transistor Doping Profile Charge Control 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1990

Authors and Affiliations

  • Henk C. de Graaff
    • 1
  • François M. Klaassen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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