Abstract
In this chapter we will first discuss some general problems in bipolar device modelling, namely the choice between injection and transport models and the validity of the charge control principle. After that we will show how the various device phenomena like main currents, Early effect, depletion capacitance etc., can be described by means of compact, explicit and analytical mathematical expressions. Unless stated otherwise, the device structure considered here is that of a vertical npn transistor. In most cases the vertical pnp transistor only needs a change of sign in its model formulas. The lateral pnp transistor, which is quite different, will be treated in a separate chapter.
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References
H. K. Gummel: Measurement of the Number of Impurities in the Base Layer of a Transistor. Proc. I.R.E. 42, 1761 (1954).
H. C. de Graaff, J. W. Slotboom, A. Schmitz: The Emitter Efficiency of Bipolar Transistors. Solid-State Electr. 20, 515 (1977).
H, Schaber et al: Process and Device Related Scaling Considerations for Polysilicon Emitter Bipolar Transistors. IEDM Techn. Digest 170 (1987).
R. Beaufroy, J. J. Sparkes: The Junction Transistor as a Charge-Controlled Device. Automat. Tel. Eng. J. 13, 310 (1957).
J. te Winkel: Past and Present of the Charge-Control Concept in the Characterization of the Bipolar Transistor. Adv. Electr. and Electr. Phys. 39, 253 (1975).
J. J. Ebers, J. L. Moll: Large Signal Behaviour of Junction Transistors. Proc. I.R.E. 42, 1761 (1954).
J. L. Moll, J. M. Ross: The Dependence of Transistor Parameters on the Distribution of Base Layer Resistivity. Proc. I.R.E. 44, 72 (1956).
H. K. Gummel: A Charge-Control Relation for Bipolar Transistors. Bell Syst. Techn. J. 49, 115 (1970).
H. K. Gummel, H. C. Poon: An Integral Charge-Control Model for Bipolar Transistors. Bell Syst. Techn. J. 49, 827 (1970).
L Getreu: Modeling the Bipolar Transistor. Tektronix Inc., Beaverton OR (1979).
H. C. de Graaff, W. J. Kloosterman: New Formulation of the Current and Charge Relations in Bipolar Transistor Modeling for CACD Purposes. IEEE Trans. Electr. Dev. ED-32, 2415 (1985).
J. L. Moll: Physics of Semiconductors. McGraw-Hill, New York (1964).
H. C. de Graaff: Review of Models for Bipolar Transistors. In: Process and Device Modeling for Integrated Circuit Design ( F. van de Wiele, W. L. Engl, P. G. Jespers, eds.). Noordhoff, Leiden (1977).
H. C. Poon, H. K. Gummel: Modeling of the Emitter Capacitance. Proc. IEEE 57, 2181 (1969).
C. T. Kirk: A Theory of Transistor Cut-Off Frequency (f T) Fall-Off at High Current Densities. I.R.E. Trans. Electr. Dev. ED-9, 164 (1962).
J. M. Early: Effects of Space-Charge Layer Widening in Junction Transistors. Proc. I.R.E. 40, 1401 (1952).
J. W. Slotboom: Iterative Scheme for 1- and 2-Dimensional D.C. Transistor Simulation. Electr. Ltrs. 5, 677 (1969).
J. R. A. Beale, J. A. G. Slatter: The Equivalent Circuit of a Transistor with a Lightly Doped Collector Operating in Saturation. Solid-State Electr. 11, 241 (1968).
J. A. Pals, H. C. de Graaff: On the Behaviour of the Base-Collector Junction of a Transistor at High Collector Current Densities. Philips Res. Rep. 24, 53 (1969).
L. A. Hahn: The Effect of Collector Resistance Upon the High Current Capability of n-p-v-n Transistors. IEEE Trans. Electr. Dev. ED-16, 654 (1969).
D. L. Bowler, F. A. Lindholm: High Current Regimes in Transistor Collector Regions. IEEE Trans. Electr. Dev. ED-20, 257 (1973).
H. C. de Graaff: High Current Density Effects in the Collector of Bipolar Transistors. In: Process and Device Modeling for Integrated Circuit Design ( F. van de Wiele, W. L. Engl, P. G. Jespers, eds). Noordhoff, Leiden (1977).
L. J. Turgeon, J. R. Mathews: A Bipolar Transistor Model of Quasi-Saturation for Use in CAD. IEDM Techn. Digest 394 (1980).
H. C. de Graaff: Compact Bipolar Transistor Modeling. In: Process and Device Modeling ( W. L. Engl, ed.). North-Holland, Amsterdam (1986).
G. M. Kull et al.: A Unified Circuit Model for Bipolar Transistors Including Quasi-Saturation Effects. I.E.E.E. Trans. Electr. Dev. ED-32, 1103 (1985).
S. L. Miller: Ionization Rates for Holes and Electrons in Silicon. Phys. Rev. 105, 1246 (1957).
R. W. Dutton: Bipolar Transistor Modeling of Avalanche Generation for Computer Simulation. I.E.E.E. Trans. Electr. Dev. ED-22, 334 (1975).
D. A. Divekar, R. E. Lovelace: Modeling of Avalanche Current of Bipolar Junction Transistors for Computer Circuit Simulation. I.E.E.E. Trans. CAD Int. Circ. and Syst. CAD-1, 114(1982).
H. C. Poon, J. C. Meckwood: Modeling of Avalanche Effect in Integral Charge Control Model. I. E.E.E. Trans. Electr. Dev. ED-19, 90 (1972).
S. M. Sze: Physics of Semiconductor Devices, 2nd ed. John Wiley & Sons, New York (1981).
J. R. Hauser: The Effects of Distributed Base Potential on Emitter Current Density and Effective Base Resistance for Stripe Transistor Geometries. I.E.E.E. Trans. Electr Dev. £D-11, 238(1964).
J. E. Lary, R. L. Anderson: Effective Base Resistance of Bipolar Transistors. I.E.E.E Trans. Electr. Dev. ED-32, 2503 (1985).
G. Rey: Effets de la Défocalisation sur le Comportement des Transistors à Jonctions Solid-State Electr. 12, 645 (1969).
H. Groendijk: Modeling Base Crowding in a Bipolar Transistor. I.E.E.E. Trans Electr. Dev. ED-20, 329 (1973).
H. C. de Graaff: Electrical Behaviour of Lightly Doped Collectors in Bipolar Transis tors. Thesis, University of Technology, Eindhoven (1975).
H. C. de Graaff: Approximate Calculations on the Spreading Resistance in Multi Emitter Structures. Philips Res. Rep. 24, 34 (1969).
J. Lindmayer, C. Y. Wrigley: Fundamentals of Semiconductor Devices. Van Nostrand, Princeton (1965).
J. te Winkel: Extended Charge-Control Model for Bipolar Transistors. I.E.E.E. Trans. Electr. Dev. ED-20, 389 (1973).
J. G. Possum, S. Veeraraghavan: Partitioned-Charge-Based Modeling of Bipolar Transistors for Non-Quasi-Static Circuit Simulation. I.E.E.E. Electr. Dev. Ltrs. EDL-7, 652 (1986).
H. Klose, A. W. Wieder: The Transient Integral Charge Control Relation—A Novel Formulation of the Currents in a Bipolar Transistor. I.E.E.E. Trans. Electr. Dev. ED-34, 1090 (1987).
P. B. Weil, L. P. McNamee: Simulation of Excess Phase in Bipolar Transistors. I. E.E.E. Trans. CAS-25, 114 (1978).
J. J. H. van den Biesen: A Simple Regional Analysis of Transit Times in Bipolar Transistors. Solid-State Electr. 29, 529 (1986).
R. G. Meyer, R. S. Mullen Charge-Control Analysis of the Collector-Base Space- Charge-Region Contribution to Bipolar Transistor Time Constant T T. I. E.E.E. Trans. Electr. Dev. ED-34, 450 (1987).
J. A. Pals: On the Noise of a Transistor with d. c. Current Crowding. Philips Res. Rep. 26, 91 (1971).
J. L. Plumb, E. R. Chenette: Flicker Noise in Transistors. I.E.E.E. Trans. Electr. Dev. ED-10, 304(1963).
J. M. C. Stork et al.: High Performance Operation of Silicon Bipolar Transistors at Liquid Nitrogen Temperatures. IEDM Techn. Digest 405 (1987).
J. W. Slotboom, H. C. de Graaff: Bandgap Narrowing in Silicon Bipolar Transistors. I.E.E.E. Trans. Electr. Dev.ED-24, 1123 (1977).
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de Graaff, H.C., Klaassen, F.M. (1990). Modelling of Bipolar Device Phenomena. In: Compact Transistor Modelling for Circuit Design. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9043-2_3
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DOI: https://doi.org/10.1007/978-3-7091-9043-2_3
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