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Process and Geometry Dependence, Optimization and Statistics of Parameters

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Compact Transistor Modelling for Circuit Design

Part of the book series: Computational Microelectronics ((COMPUTATIONAL))

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Abstract

The parameters of a compact model are in general dependent on the geometry of the device and on the technological process steps. The geometry of the device is mainly characterized by the lateral dimensions of the junctions in bipolar transistors and by the channel length and width in MOS transistors. The dimensions must be known in silicon because only the real dimensions are electrically significant. They are determined by the dimensions of the mask, corrected for such effects as outdiffusion, underetching, misalignment of masks, encroachment of isolation oxides, etc.

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Authors and Affiliations

  1. Philips Research Laboratories, Eindhoven, The Netherlands

    Dr. Henk C. de Graaff & Dr. François M. Klaassen

Authors
  1. Dr. Henk C. de Graaff
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  2. Dr. François M. Klaassen
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© 1990 Springer-Verlag/Wien

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de Graaff, H.C., Klaassen, F.M. (1990). Process and Geometry Dependence, Optimization and Statistics of Parameters. In: Compact Transistor Modelling for Circuit Design. Computational Microelectronics. Springer, Vienna. https://doi.org/10.1007/978-3-7091-9043-2_11

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  • DOI: https://doi.org/10.1007/978-3-7091-9043-2_11

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-9045-6

  • Online ISBN: 978-3-7091-9043-2

  • eBook Packages: Springer Book Archive

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