Abstract
Mass spectrometric analysis of atoms and molecules removed from a solid surface by ion bombardment is a very direct method for surface analysis. When appropriate bombarding conditions are used and the mass spectrometric signals are measured as a function of the sputtered depth, the determination of concentration depth profiles, for example in thin film systems, becomes possible1.
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Beckmann, P., Kopnarski, M., Oechsner, H. (1985). Secondary Neutral Mass Spectrometry Depth Profile Analysis of Silicides. In: Grasserbauer, M., Wegscheider, W. (eds) Progress in Materials Analysis. Mikrochimica Acta Supplementum, vol 11. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8840-8_6
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DOI: https://doi.org/10.1007/978-3-7091-8840-8_6
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