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Secondary Neutral Mass Spectrometry Depth Profile Analysis of Silicides

  • P. Beckmann
  • M. Kopnarski
  • H. Oechsner
Conference paper
Part of the Mikrochimica Acta Supplementum book series (MIKROCHIMICA, volume 11)

Abstract

Mass spectrometric analysis of atoms and molecules removed from a solid surface by ion bombardment is a very direct method for surface analysis. When appropriate bombarding conditions are used and the mass spectrometric signals are measured as a function of the sputtered depth, the determination of concentration depth profiles, for example in thin film systems, becomes possible1.

Keywords

Depth Profile Gate Oxide Metal Silicide Silicide Layer Depth Profile Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1985

Authors and Affiliations

  • P. Beckmann
    • 1
  • M. Kopnarski
    • 1
  • H. Oechsner
    • 1
  1. 1.Fachbereich PhysikUniversität KaiserslauternKaiserslauternFederal Republic of Germany

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