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Positron Studies of Defects in Metals and Semiconductors

  • Otto Brümmer
  • G. Dlubek
Part of the Mikrochimica Acta Supplementum book series (MIKROCHIMICA, volume 11)

Abstract

The study of defect properties in metallic and semiconducting material is important from the fundamental as well from the technological point of view. Positron annihilation is a method which is sensitive to defects on a microscopic and atomic scale. The method has its special potential in detecting vacancy-type defects. Positrons have found wide applications in studying defects in metals. Recently the positron method has also turned out to be a potential tool for defects in semiconductors. In this paper we present examples of applying positron annihilation in three different fields: (i) recovery and recrystallization of plastically deformed metals, (ii) decomposition phenomena in alloys, and (iii) vacancy-defects in compound semiconductors.

Keywords

Electron Spin Resonance Positron Annihilation Deep Level Transient Spectroscopy Positron Lifetime Vacancy Cluster 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag 1985

Authors and Affiliations

  • Otto Brümmer
    • 1
  • G. Dlubek
    • 1
  1. 1.Sektion PhysikMartin-Luther-Universität Halle-WittenbergHalle-SaaleGerman Democratic Republic

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