Abstract
The study of defect properties in metallic and semiconducting material is important from the fundamental as well from the technological point of view. Positron annihilation is a method which is sensitive to defects on a microscopic and atomic scale. The method has its special potential in detecting vacancy-type defects. Positrons have found wide applications in studying defects in metals. Recently the positron method has also turned out to be a potential tool for defects in semiconductors. In this paper we present examples of applying positron annihilation in three different fields: (i) recovery and recrystallization of plastically deformed metals, (ii) decomposition phenomena in alloys, and (iii) vacancy-defects in compound semiconductors.
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Brümmer, O., Dlubek, G. (1985). Positron Studies of Defects in Metals and Semiconductors. In: Grasserbauer, M., Wegscheider, W. (eds) Progress in Materials Analysis. Mikrochimica Acta Supplementum, vol 11. Springer, Vienna. https://doi.org/10.1007/978-3-7091-8840-8_15
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DOI: https://doi.org/10.1007/978-3-7091-8840-8_15
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