The basic semiconductor equations, the derivation of which we have thoroughly discussed in Chapter 2, just determine the structure of the set of equations which we shall have to solve in order to simulate the internal behavior of a device. Process modeling, as sketched in Chapter 3, delivers information about the geometry of a device and the distribution of dopants, whieh can also be considered to be a physical Parameter. As we have already noticed, a couple of additional physical parameters are inherently associated with the basic semiconductor equations. Any quantitative, or even qualitative, Simulation of a device relies heavily on applicable models for these parameters. In addition, a mathematieal characterization of the problem of solving the basic semiconductor equations is only fqasible with at least qualitative knowledge of the associated parameters (e.g. sign, smoothness, order of magnitude). Therefore, we shall discuss in this chapter the most important models for the physical parameters. A review has also been presented in [4.41].


Valence Band Physical Review Impact Ionization Ionization Rate Free Carrier Concentration 
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Copyright information

© Springer-Verlag/Wien 1984

Authors and Affiliations

  • Siegfried Selberherr
    • 1
  1. 1.Institut für Allgemeine Elektrotechnik und ElektronikTechnische Universität WienAustria

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