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Abstract

To accurately analyze an arbitrary semiconductor structure which is intended as a seif contained device under various operating conditions, a mathematieal model has to be given. The equations which form this mathematieal model are commonly called the basic semiconductor equations. They can be derived from Maxwell’s equations (2-1), (2-2), (2-3) and (2-4), several relations obtained from solid-state physics knowledge about semiconductors and various — sometimes overly simplistic — assumptions.
$$\text{rot}\,\vec H = \vec J + \frac{{\partial \vec D}} {{\partial t}}$$
(2-1)
$$\text{rot}\,\vec E = - \frac{{\partial \vec B}} {{\partial t}}$$
(2.2)
$$\text{div }\vec D = \rho$$
(2.3)
$$\text{div }\vec B = 0$$
(2.4)
\(\vec E\) and \(\vec D\)are the electric field and displacement vector; \(\vec H\)and \(\vec B\)are the magnetic field and induction vector, respectively. \(\vec J\)denotes the conduction current density, and ρ is the electric charge density.

Keywords

Carrier Concentration Boltzmann Equation Bipolar Transistor Impurity Band Electric Field Vector 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag/Wien 1984

Authors and Affiliations

  • Siegfried Selberherr
    • 1
  1. 1.Institut für Allgemeine Elektrotechnik und ElektronikTechnische Universität WienAustria

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